Titlebook: Evaluation of Advanced Semiconductor Materials by Electron Microscopy; David Cherns Conference proceedings 1989 Plenum Press, New York 198

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書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy影響因子(影響力)




書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy影響因子(影響力)學科排名




書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy網絡公開度




書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy網絡公開度學科排名




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書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy被引頻次學科排名




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書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy年度引用學科排名




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書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy讀者反饋學科排名

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MAZE

Transmission Electron Microscopy and Transmission Electron Diffraction Studies of Atomic Ordering intes such as InP or GaAs. A variety of growth techniques are used to produce these epitaxial layers such as liquid phase epitaxy (LPE), vapour phase epitaxy (VPE), molecular beam epitaxy (MBE) and organometallic vapour phase epitaxy (OMVPE).

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https://doi.org/10.1007/978-3-322-87537-2ntermixes with Gallium and gives rise to a thicker film, InGaAs, the Indium proportion being at least 50 %. The interface InAs/GaAs is atomically flat, whereas the interface GaAs/InAs is extremely rough. This may be a way of decreasing the elastic energy.

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Harridan

,Teilsystem zur Therapiedurchführung,ues can produce rather accurate results.. An urgent need exists, however, for a method which can be applied to non-centrosymmetric semiconductors and other materials which are crystalline only on a sub-micron scale.

Harridan

High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayersntermixes with Gallium and gives rise to a thicker film, InGaAs, the Indium proportion being at least 50 %. The interface InAs/GaAs is atomically flat, whereas the interface GaAs/InAs is extremely rough. This may be a way of decreasing the elastic energy.

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Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconthod of examining superlattice reflections from both periodic and irregular multilayer structures and studies of single quantum well samples of AlGaAs/GaAs and InP/InGaAs, which give well thicknesses to near monolayer precision, are also described.

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Measurement of Structure-Factor Phases by Electron Diffraction for the Study of Bonding in Non-Centrues can produce rather accurate results.. An urgent need exists, however, for a method which can be applied to non-centrosymmetric semiconductors and other materials which are crystalline only on a sub-micron scale.

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0258-1221 terostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as thei