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Titlebook: Epitaxy of Semiconductors; Introduction to Phys Udo W. Pohl Textbook 20131st edition Springer-Verlag Berlin Heidelberg 2013 Crystal Structu

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書目名稱Epitaxy of Semiconductors
副標題Introduction to Phys
編輯Udo W. Pohl
視頻videohttp://file.papertrans.cn/314/313368/313368.mp4
概述Provides the essentials for a comprehensive graduate course on crystal growth of semiconductor heterostructures.Covers thermodynamics and kinetics of layer growth and major growth techniques.Gives det
叢書名稱Graduate Texts in Physics
圖書封面Titlebook: Epitaxy of Semiconductors; Introduction to Phys Udo W. Pohl Textbook 20131st edition Springer-Verlag Berlin Heidelberg 2013 Crystal Structu
描述Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
出版日期Textbook 20131st edition
關鍵詞Crystal Structures; Epitaxy of Semiconductors; Liquid Phase Epitaxy; Materials for Optoelectronics; Meta
版次1
doihttps://doi.org/10.1007/978-3-642-32970-8
isbn_ebook978-3-642-32970-8Series ISSN 1868-4513 Series E-ISSN 1868-4521
issn_series 1868-4513
copyrightSpringer-Verlag Berlin Heidelberg 2013
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Structural Properties of Heterostructures, on perfect, polytype, and mixed bulk crystals we focus on elastic properties of pseudomorphic strained-layer structures. Then the concept of critical layer thickness is introduced, and dislocations relieving the strain in epitaxial layers are presented. X-ray diffraction—the standard tool for struc
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Electronic Properties of Heterostructures,nsider the valence and conduction bands of zincblende and wurtzite bulk semiconductors and illustrate the effects of strain and alloying. Then, models describing the band lineup of heterostructures are introduced and the effect of interface stoichiometry is illustrated. The characteristic scale for
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Thermodynamics of Epitaxial Layer-Growth,ms of macroscopic quantities. We consider a thermodynamic description for the transition of a gaseous or liquid phase to the solid phase. The initial stage of layer growth requires a nucleation process. We discuss the energy of a surface and illustrate the nucleation of a layer and the occurrence of
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