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Titlebook: Epitaxy of Nanostructures; Vitaly A. Shchukin,Nikolai N. Ledentsov,Dieter Bim Book 2004 Springer-Verlag Berlin Heidelberg 2004 Epitaxy.HTS

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發(fā)表于 2025-3-21 18:12:47 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Epitaxy of Nanostructures
編輯Vitaly A. Shchukin,Nikolai N. Ledentsov,Dieter Bim
視頻videohttp://file.papertrans.cn/314/313366/313366.mp4
概述Will be the first Springer book in the field of formation of nanodevices by self-organized growth.Includes supplementary material:
叢書名稱NanoScience and Technology
圖書封面Titlebook: Epitaxy of Nanostructures;  Vitaly A. Shchukin,Nikolai N. Ledentsov,Dieter Bim Book 2004 Springer-Verlag Berlin Heidelberg 2004 Epitaxy.HTS
描述The general trend in modern solid state physics and technology is to make things smaller. The size of key elements in modern devices approaches the nanometer scale, for both vertical and lateral dimensions. Ultrathin layers, or quantum wells, had already gained broad acceptance for applications in micro- and optoelectronics by the 1980s. However, the development of het- erostructures with lower dimensionality (quantum wires, where carriers are confined in two directions and move freely in one, and quantum dots, where carriers are confined in all three directions) took longer. It became clear that quantum wire and dot structures constitute the utmost technological chal- lenge, whilst providing enormous advantages. At the beginning of the 1990s, a few outstanding discoveries concern- ing self-organization phenomena at crystal surfaces for direct fabrication of nanostructures led to a change in the major paradigms of semiconductor physics and technology. This new approach in epitaxy enables fast parallel fabrication of large densities of quantum dots or wires for almost unlimited material combinations and has become the basis for a powerful new branch of nanotechnology. Quantum dots,
出版日期Book 2004
關(guān)鍵詞Epitaxy; HTS; Laser; PES; Semiconductor; nanotechnology; quantum dot
版次1
doihttps://doi.org/10.1007/978-3-662-07066-6
isbn_softcover978-3-642-08735-6
isbn_ebook978-3-662-07066-6Series ISSN 1434-4904 Series E-ISSN 2197-7127
issn_series 1434-4904
copyrightSpringer-Verlag Berlin Heidelberg 2004
The information of publication is updating

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Angel Investment: Motivation and Strategies,ow-dimensional (1D and OD) systems. It is hard to overestimate the significance of these phenomena. Nature indeed offers us great assistance, providing small scale and high quality systems that cannot be fabricated by conventional lithography.
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Self-Organization Phenomena at Crystal Surfaces,ow-dimensional (1D and OD) systems. It is hard to overestimate the significance of these phenomena. Nature indeed offers us great assistance, providing small scale and high quality systems that cannot be fabricated by conventional lithography.
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Engineering of Complex Nanostructures: Working Together with Nature,m wire and quantum dot (QD) structures with exciting physical properties and great potential for applications. It turns out, however, that merely exploiting natural phenomena is far from sufficient either for the physics or for the applications. We may mention just a few limitations:
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Angeh?rigenpflege als Gesundheitsrisikoonal freedom, freedom of choice, freedom of communication, and indeed everything that is understood under the notion of democracy. Modern information and communication technology has dramatically changed the world, significantly affecting all areas of human existence. This global technology is the d
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Angeh?rigenpflege neben dem Beruf are usually too large for these tiny things. Although some tools have been proposed to manipulate individual atoms brick by brick, as it were, e.g, by using a scanning probe microscopy (SPM) tip [2.1], these approaches seem to be far too expensive, and major success in nanofabrication has been achi
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The Divine in Husserl and Other Explorations been to a large extent motivated and fueled by their potentially advantageous and unique device applications. Those in optical communications (lasers, optical amplifiers, photodetectors) and data processing and storage (single-electron devices) are based mainly on the fundamental properties of QD n
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