Titlebook: Epitaxy; Physical Principles Marian A. Herman,Wolfgang Richter,Helmut Sitter Book 2004 Springer-Verlag Berlin Heidelberg 2004 Epilayers in

民俗學(xué)

書目名稱Epitaxy影響因子(影響力)




書目名稱Epitaxy影響因子(影響力)學(xué)科排名




書目名稱Epitaxy網(wǎng)絡(luò)公開度




書目名稱Epitaxy網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Epitaxy被引頻次




書目名稱Epitaxy被引頻次學(xué)科排名




書目名稱Epitaxy年度引用




書目名稱Epitaxy年度引用學(xué)科排名




書目名稱Epitaxy讀者反饋




書目名稱Epitaxy讀者反饋學(xué)科排名

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Brain-Imaging

Prevention and Treatment of Infectionssm of two lattice planes that have networks of identical or quasi-identical form and of closely similar spacings”. Experimental data gained later indicated that epitaxy occurs if the lattice misfit, defined as 100 (a.—a.)/a., where a. and a. are the corresponding network spacings (lattice constants)

Leaven

Leaven

minion

Introduction orientation relationship, as revealed by their external forms [1.1]. These observations led to attempts to reproduce the effect artificially, during crystal growth from solution, and the first recorded successful attempt was reported in 1836 by Frankenheim [1.2], when the now well-known case of par

Trigger-Point

Homo- and Heteroepitaxial Crystallization Phenomena., small embryonic clusters of atoms or molecules, agglomerate to form “islands”. As growth proceeds, agglomeration increases, chains of islands are later formed and join up to produce a continuous deposit which, however, still contains channels and holes. These holes eventually fill to give a conti

sclera

Application Areas of Epitaxially Grown Layer Structuresuding mixed systems like, e.g., metal—semiconductor or semiconductor-on-insulator device structures. The epitaxially grown structures may be of very high perfection, satisfying the so-called device-quality demands. They are suitable for application in many branches of the “high technology” part of e