Titlebook: Epitaxial Growth of III-Nitride Compounds; Computational Approa Takashi Matsuoka,Yoshihiro Kangawa Book 2018 Springer International Publish

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書目名稱Epitaxial Growth of III-Nitride Compounds影響因子(影響力)




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Book 2018ced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds..

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Fundamental Properties of III-Nitride Surfaces of surface reconstructions. It is well known that reconstructed structures appear on the growth front (surfaces) of semiconductor materials, so that investigations for the reconstructions on III-nitride surfaces are necessary from theoretical viewpoints taking growth conditions into account.

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0933-033X th processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds..978-3-030-09542-0978-3-319-76641-6Series ISSN 0933-033X Series E-ISSN 2196-2812

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Spinal Anesthesia for Cesarean Section,sion wavelength is estimated to be 224?nm for the AlN/GaN superlattice with one GaN-monolayer, which is remarkably shorter than that for Al-rich AlGaN alloys. The optical matrix element of such superlattice is found to be 57% relative to the GaN bulk value.

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