書目名稱 | Emerging Resistive Switching Memories |
編輯 | Jianyong Ouyang |
視頻video | http://file.papertrans.cn/309/308370/308370.mp4 |
概述 | Details how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles.Explains how charge transfer can lead to resistive switches.Demonstrates how conducti |
叢書名稱 | SpringerBriefs in Materials |
圖書封面 |  |
描述 | This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.. |
出版日期 | Book 2016 |
關(guān)鍵詞 | Bistable devices; Charge trapping; Fabrication of novel non-vole; rest; random-access mem; ; Memory devi |
版次 | 1 |
doi | https://doi.org/10.1007/978-3-319-31572-0 |
isbn_softcover | 978-3-319-31570-6 |
isbn_ebook | 978-3-319-31572-0Series ISSN 2192-1091 Series E-ISSN 2192-1105 |
issn_series | 2192-1091 |
copyright | The Author(s) 2016 |