Titlebook: Emerging Electronic Devices, Circuits and Systems; Select Proceedings o Chandan Giri,Takahiro Iizuka,Bhargab B. Bhattachar Conference proce

錯(cuò)事

Hardware-Efficient ,-Learning Accelerator for Robot Path Planning,e proposed an efficient hardware architecture to implement .-learning testing algorithm which is suitable for real-time robotics applications. The developed architecture improves the performance and accuracy, which in our case is robot path planning. Major focus lies on the two parameters, i.e., learning and recognition speeds.

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Flavouring

genesis

https://doi.org/10.1007/978-94-010-0001-7lly stacked junctionless field effect transistor (JL-NSFET) at gate length (l.)?=?16?nm. The transfer characteristics curve (I.-V.), transconductance (g.), and its second- and third-order derivatives, i.e., g. and g. performances are explored. The detailed analysis reveals that the temperature shows

過時(shí)

Mycotoxins in Plants and Plant Productsh appropriate dopants. As of yet, these effects of non-metallic co-doping at the different sub-lattice sites are yet to be observed systematically from a theoretical perspective for gas-molecule detection on graphene. The study investigates molecular adsorption of ammonia (NH.) on boron/arsenic (B/A

obscurity

sphincter

https://doi.org/10.1007/978-1-4757-1830-0(CNTFET) technology. The 3 dB BW for voltage gain and current gain is 54.028?GHz and 48.846?GHz, respectively, for DO-CCII. The average power consumed by the DO-CCII is 440.33 .W. It has a DC voltage range from ?370 to 410 mV and a current range from ?160 to 160 .A. The multi-input single output (MI

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Ian D. Duncan,Robin J M Franklinmising candidate for future generation integrated circuits. This is because of attractive salient features like superior compatibility with existing MOS process technology, high density of integration, unlimited forbearance and excellent information processing. This paper discusses the implementatio

visceral-fat

https://doi.org/10.1007/978-4-431-53924-7lti-gate control. To get a better insight to the origin of the short-channel effects for independently controlled multi-gate MOSFET, investigation is performed here for the very thin SOI layer and BOX thickness. It is found that the microscopic potential distribution within the device is the result