| 書目名稱 | Electronic Structure of Metal-Semiconductor Contacts |
| 編輯 | Winfried M?nch |
| 視頻video | http://file.papertrans.cn/307/306421/306421.mp4 |
| 叢書名稱 | Perspectives in Condensed Matter Physics |
| 圖書封面 |  |
| 描述 | Interface and surface science have been important in the development of semicon- ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor- insulator interfaces, heterojunctions between distinct semiconductors, and metal- semiconductor contacts. The latter ones stood almost at the very beginning of semi- conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm‘s law was called, could not be given at that time. A prerequisite was Wilson‘s quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space- |
| 出版日期 | Book 1990 |
| 關(guān)鍵詞 | AES; Experiment; Halbleiter; Kupfer; Potential; REM; STEM; development |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-94-009-0657-0 |
| isbn_softcover | 978-94-010-6780-5 |
| isbn_ebook | 978-94-009-0657-0Series ISSN 0923-1749 |
| issn_series | 0923-1749 |
| copyright | Editorial Jaca Book spa, Milano 1990 |
|Archiver|手機版|小黑屋|
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