Titlebook: Electronic Properties of Doped Semiconductors; Boris I. Shklovskii,Alex L. Efros Book 1984 Springer-Verlag Berlin Heidelberg 1984 Properti

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MANIA

Testarchitekturen für VLSI-Bausteineer and Abrahams, one can reduce the problem of calculating the hopping conductivity to that of calculating the conductivity of a random network of resistors connecting donor pairs. Naive approaches to that problem based on averaging either resistances or conductances are critically considered.

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GUISE

Dependence of Hopping Conduction on the Impurity Concentration and Strain in the Crystal The anisotropy of hopping conductivity is calculated for the case of large strain in .and .-Ge, where the wave functions of impurities are associated with a single ellipsoid in the electron spectrum.

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Book 1984hysical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish- ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of

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