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Titlebook: Electronic Materials; From Silicon to Orga L. S. Miller,J. B. Mullin Book 1991 Springer Science+Business Media New York 1991 electronic mat

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發(fā)表于 2025-3-30 08:36:29 | 只看該作者
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發(fā)表于 2025-3-30 20:35:39 | 只看該作者
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發(fā)表于 2025-3-30 21:19:00 | 只看該作者
Abdel-Samad M. Ali,Chedli B. Chattiset for the crystal grower for a number of reasons. Firstly, it enables one to determine the range of experimental conditions under which the required crystalline phase is the thermodynamically most stable phase. Secondly, where the purpose is to grow an alloy crystal (such as a ternary III-V compou
55#
發(fā)表于 2025-3-31 04:22:43 | 只看該作者
https://doi.org/10.1007/978-3-031-45936-8ometric or nearly so. The production of semiconductors in single-crystal form is a core requirement of almost all semiconductor device technology. As a consequence, the whole field of crystal growth technology is strongly device driven and sensitive to commercial pressures related to production effi
56#
發(fā)表于 2025-3-31 05:16:58 | 只看該作者
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發(fā)表于 2025-3-31 10:17:48 | 只看該作者
D. Heuser,N. Freckmann,K. Wiedemannductors such as silicon. These developments were possible because the electrical conductivity of crystalline silicon can be controlled over many orders of magnitude by doping, that is, by the addition during growth of the crystal of small concentrations of impurities. However, there are a number of
58#
發(fā)表于 2025-3-31 14:05:21 | 只看該作者
Dauer der Pneumothoraxbehandlung,nto the semiconductor impurity atoms possessing a different number of valency electrons from those of the component elements of the semiconductor. In the case of compound semiconductors, an alternative procedure to control the carrier concentration is to introduce appropriate defects into the materi
59#
發(fā)表于 2025-3-31 18:55:52 | 只看該作者
60#
發(fā)表于 2025-3-31 22:49:43 | 只看該作者
Schweigepflicht und operativer Eingriffenges for the process engineer. For analog applications the diversity of frequencies from about 1 GHz to 100 GHz means that a standard technology cannot be adopted for the whole frequency spectrum as the circuit topologies required at each end of this frequency range differ widely. At low frequencie
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