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Titlebook: Electronic Band Structure and Its Applications; Proceedings of the I M. Yussouff Conference proceedings 1987 Springer-Verlag Berlin Heidelb

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樓主: 突然
21#
發(fā)表于 2025-3-25 07:00:49 | 只看該作者
https://doi.org/10.1007/978-3-662-25566-7isorder inherent in the alloys. The DLTS spectra can be useful in determining the character of the disorder. Relationships between the broadening of the DLTS spectra, the energy level distribution of the localised energy level and a ratio of the localisation radius to the characteristic alloy disord
22#
發(fā)表于 2025-3-25 11:20:13 | 只看該作者
https://doi.org/10.1007/978-3-663-01367-9 unusual behaviour poses a challenge to the theorist, and I believe that these properties indicate the emergence of a new paradigm in defect physics. I shall illustrate this by picking three specific examples: broadening of the gap level associated with the defect, fractal character of the defect wa
23#
發(fā)表于 2025-3-25 12:28:11 | 只看該作者
Vacancies and magnetic impurities in transition metals,
24#
發(fā)表于 2025-3-25 19:24:20 | 只看該作者
Relationship of band theory to heavy fermion behavior,
25#
發(fā)表于 2025-3-25 22:11:47 | 只看該作者
Anomalous electric structure and transport properties of quasicrystals and incommensurate layered s
26#
發(fā)表于 2025-3-26 03:40:06 | 只看該作者
27#
發(fā)表于 2025-3-26 07:16:42 | 只看該作者
Electron energy bands in disordered alloys: Comparison between photoemission and KKR-CPA,
28#
發(fā)表于 2025-3-26 12:26:30 | 只看該作者
29#
發(fā)表于 2025-3-26 15:56:06 | 只看該作者
Euro und Internationale Wirtschafthere in this volume and the other one is the Car-Parrinello method,based on the molecular dynamical simulated annealing technique [37]. Both the methods utilise the LDA-DFT for constructing the effective potential..Finally,we conclude that the electronic structure studies are very fundamental to the
30#
發(fā)表于 2025-3-26 18:56:42 | 只看該作者
Density-functional formalism: ,,, discontinuities, and the local density approximation,earch method. The results illustrate how the discontinuity in the exchange-correlation potential is built up as the chemical potential is moved through the gap. We have further studied a linear chain ("semiconductor") model, for which we have obtained an exact numerical solution. We have constructed
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