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Titlebook: Electromigration Modeling at Circuit Layout Level; Cher Ming Tan,Feifei He Book 2013 The Author(s) 2013 3D Modeling.Atomic Flux Divergence

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發(fā)表于 2025-3-21 20:07:35 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱(chēng)Electromigration Modeling at Circuit Layout Level
編輯Cher Ming Tan,Feifei He
視頻videohttp://file.papertrans.cn/307/306077/306077.mp4
概述Highlights a new method which models the interconnects EM reliability in both 3D and circuit layout level.Combines Cadence and ANSYS softwares to model interconnect reliability of real 3D circuit made
叢書(shū)名稱(chēng)SpringerBriefs in Applied Sciences and Technology
圖書(shū)封面Titlebook: Electromigration Modeling at Circuit Layout Level;  Cher Ming Tan,Feifei He Book 2013 The Author(s) 2013 3D Modeling.Atomic Flux Divergence
描述Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.
出版日期Book 2013
關(guān)鍵詞3D Modeling; Atomic Flux Divergence (AFD); Circuit Layout Level; Electro-thermo-structural Simulations;
版次1
doihttps://doi.org/10.1007/978-981-4451-21-5
isbn_softcover978-981-4451-20-8
isbn_ebook978-981-4451-21-5Series ISSN 2191-530X Series E-ISSN 2191-5318
issn_series 2191-530X
copyrightThe Author(s) 2013
The information of publication is updating

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沙發(fā)
發(fā)表于 2025-3-21 20:45:19 | 只看該作者
3D Circuit Model Construction and Simulation,a method to construct a complete 3D circuit model is necessary and this chapter will illustrate the construction and the corresponding transient electro-thermo-structural simulations for the EM reliability assessment of an IC.
板凳
發(fā)表于 2025-3-22 03:23:05 | 只看該作者
Comparison of EM Performances in Circuit and Test Structures, EM models in literature use the line-via test structures which are only part of the real circuit structure. To further demonstrate the necessity for complete circuit modeling, the comparison of the EM performances in a circuit structure and a standard line-via test structure is performed in this ch
地板
發(fā)表于 2025-3-22 07:22:36 | 只看該作者
Interconnect EM Reliability Modeling at Circuit Layout Level,cuits consist of a large number of transistors and other circuit components connected by complex inter-block connections made of multiple metal layers. In this chapter, a complete 3D circuit model including both intra- and inter-block interconnects is constructed. Electro-thermo-structural simulatio
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發(fā)表于 2025-3-22 09:01:47 | 只看該作者
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發(fā)表于 2025-3-22 14:57:53 | 只看該作者
Comparison of EM Performances in Circuit and Test Structures,complete circuit modeling, the comparison of the EM performances in a circuit structure and a standard line-via test structure is performed in this chapter. Both the EM test condition and the circuit operation condition are considered.
7#
發(fā)表于 2025-3-22 18:39:04 | 只看該作者
Interconnect EM Reliability Modeling at Circuit Layout Level,. In this chapter, a complete 3D circuit model including both intra- and inter-block interconnects is constructed. Electro-thermo-structural simulations are performed, and the modifications that can help enhancing the EM reliability of the circuit are carried out based on the observations in the simulation.
8#
發(fā)表于 2025-3-23 01:04:41 | 只看該作者
Die Einstellungen und ihr Gegenstandstributions of the interconnects in an IC were greatly affected by the interconnect structures and the surrounding materials, the 2D EM circuit simulators based only on current density were no longer adequate. Thus, there is a need for 3D EM modeling at circuit layout level.
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發(fā)表于 2025-3-23 05:27:33 | 只看該作者
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發(fā)表于 2025-3-23 05:47:49 | 只看該作者
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