Titlebook: Electroluminescence; Proceedings of the F Shigeo Shionoya,Hiroshi Kobayashi Conference proceedings 19891st edition Springer-Verlag Berlin H

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Secondary Light Output from ZnS:Mn Thin Film Electroluminescent DevicesnS:Mn EL powders, in contrast to ZnS phosphors with other activators [3], is ascribed to the specific nature of the Mn activator that allows only localized transitions within the luminescence center [3]. However, the specific light generation mechanism in ZnS:Mn does not rule out the appearance of s

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Konrad Ott,Jan Dierks,Lieske Voget-Kleschiniconductors and silicon have remained unexplored, despite their obvious potential for light emitting and laser diodes. The characteristic photoluminescence and electroluminescence spectra of rare earth ions in III–V and silicon semiconductors were reported recently [1–4].

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Novel Step Impact Electroluminescent Devicesiconductors and silicon have remained unexplored, despite their obvious potential for light emitting and laser diodes. The characteristic photoluminescence and electroluminescence spectra of rare earth ions in III–V and silicon semiconductors were reported recently [1–4].

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the Auger effect. This review summarizes a current status of the experiment and theory of the Auger effect and its relationship to the quantum efficiency of high-field electroluminescence. Mechanisms (electric-dipole versus exchange) governing the Auger-type energy transfer processes are discussed.

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