| 書目名稱 | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors |
| 編輯 | Mengqi Fu |
| 視頻video | http://file.papertrans.cn/306/305752/305752.mp4 |
| 概述 | Nominated as an outstanding Ph.D. thesis by Peking University in 2016.Demonstrates high-performance field-effect transistors based on single-crystalline wurtzite ultrathin InAs nanowires with diameter |
| 叢書名稱 | Springer Theses |
| 圖書封面 |  |
| 描述 | .This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known.?.The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performanceof the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and pro |
| 出版日期 | Book 2018 |
| 關(guān)鍵詞 | InAs nanowires; Indium Arsenide; field-effect transistors; electrical properties; ultrathin nanowires; cr |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-981-13-3444-3 |
| isbn_ebook | 978-981-13-3444-3Series ISSN 2190-5053 Series E-ISSN 2190-5061 |
| issn_series | 2190-5053 |
| copyright | Springer Nature Singapore Pte Ltd. 2018 |
|Archiver|手機(jī)版|小黑屋|
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