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Titlebook: Electrical Properties of Graphite Nanoparticles in Silicone; Flexible Oscillators Samuel David Littlejohn Book 2014 Springer International

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發(fā)表于 2025-3-21 16:53:39 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱(chēng)Electrical Properties of Graphite Nanoparticles in Silicone
副標(biāo)題Flexible Oscillators
編輯Samuel David Littlejohn
視頻videohttp://file.papertrans.cn/306/305751/305751.mp4
概述Nominated as an outstanding Ph.D. thesis by the University of Bath, UK.Reports on the discovery of a broad negative differential resistance region in a flexible composite.Demonstrates strain-tuned fle
叢書(shū)名稱(chēng)Springer Theses
圖書(shū)封面Titlebook: Electrical Properties of Graphite Nanoparticles in Silicone; Flexible Oscillators Samuel David Littlejohn Book 2014 Springer International
描述This thesis examines a novel class of flexible electronic material with great potential for use in the construction of stretchable amplifiers and memory elements.? Most remarkably the composite material produces spontaneous oscillations that increase in frequency when pressure is applied to it. In this way, the material mimics the excitatory response of pressure-sensing neurons in the human skin. The composites, formed of silicone and graphitic nanoparticles, were prepared in several allotropic forms and functionalized with naphthalene diimide molecules. A systematic study is presented of the negative differential resistance (NDR) region of the current-voltage curves, which is responsible for the material’s active properties. This study was conducted as a function of temperature, graphite filling fraction, scaling to reveal the break-up of the samples into electric field domains at the onset of the NDR region, and an electric-field induced metal-insulator transition in graphite nanoparticles. The effect of molecular functionalization on the miscibility threshold and the current-voltage curves is demonstrated. Room-temperature and low-temperature measurements were performed on these
出版日期Book 2014
關(guān)鍵詞Bilayer Graphene; Composite Films; Flexible Electronic Materials; Functionalization with Naphthalene Di
版次1
doihttps://doi.org/10.1007/978-3-319-00741-0
isbn_softcover978-3-319-34617-5
isbn_ebook978-3-319-00741-0Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightSpringer International Publishing Switzerland 2014
The information of publication is updating

書(shū)目名稱(chēng)Electrical Properties of Graphite Nanoparticles in Silicone影響因子(影響力)




書(shū)目名稱(chēng)Electrical Properties of Graphite Nanoparticles in Silicone影響因子(影響力)學(xué)科排名




書(shū)目名稱(chēng)Electrical Properties of Graphite Nanoparticles in Silicone網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱(chēng)Electrical Properties of Graphite Nanoparticles in Silicone網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱(chēng)Electrical Properties of Graphite Nanoparticles in Silicone被引頻次




書(shū)目名稱(chēng)Electrical Properties of Graphite Nanoparticles in Silicone被引頻次學(xué)科排名




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Fabrication and Measurement,vel, having been developed at the University of Bath, and are explained in detail. Firstly, the composite mixing and curing methods are given. Then, the mounts that hold and enable electrical contact to the composite are described. This includes a description of the imprint lithography method, which
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Tunneling Negative Differential Resistance in a GSC,dence is used to demonstrate that the NDR originates from a . transition of embedded bilayers in specifically orientated graphite nanoparticles. NDR has not been observed before in a GSCs and could be exploited to create flexible oscillators and amplifiers, realizing flexible . electronic devices.
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Electronic Amplification in the NDR Region,C circuit when biased in the NDR region. We first explain how this is possible by demonstrating a lambda diode as an oscillator and amplifier. In the process we derive and confirm equations for the oscillation frequency, the cut-off frequency and the gain of the amplifier.
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Conclusions and Future Work,rix. We have made the exciting discovery of a NDR region in the .–. characteristics of the composite at low temperatures. We have conducted a detailed study on the effects of volume fraction, filler type, probe separation and temperature dependence; combined with theoretical modelling of the LDOS in
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Grundlegende Operationen der FarbenchemieC circuit when biased in the NDR region. We first explain how this is possible by demonstrating a lambda diode as an oscillator and amplifier. In the process we derive and confirm equations for the oscillation frequency, the cut-off frequency and the gain of the amplifier.
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