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Titlebook: Electrical Characterization of Silicon-on-Insulator Materials and Devices; Sorin Cristoloveanu,Sheng S. Li Book 1995 Springer Science+Busi

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書(shū)目名稱(chēng)Electrical Characterization of Silicon-on-Insulator Materials and Devices
編輯Sorin Cristoloveanu,Sheng S. Li
視頻videohttp://file.papertrans.cn/306/305702/305702.mp4
叢書(shū)名稱(chēng)The Springer International Series in Engineering and Computer Science
圖書(shū)封面Titlebook: Electrical Characterization of Silicon-on-Insulator Materials and Devices;  Sorin Cristoloveanu,Sheng S. Li Book 1995 Springer Science+Busi
描述Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu- siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri- butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capabil
出版日期Book 1995
關(guān)鍵詞Diode; electronics; material; microelectronics; transistor; Wafer
版次1
doihttps://doi.org/10.1007/978-1-4615-2245-4
isbn_softcover978-1-4613-5945-6
isbn_ebook978-1-4615-2245-4Series ISSN 0893-3405
issn_series 0893-3405
copyrightSpringer Science+Business Media New York 1995
The information of publication is updating

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Grundlagen der anorganischen Chemieonductor layer from the semiconductor substrate (i.e., the SIS structure). Methods of forming SIS structures include Separation by IM-plantation of OXygen (SIMOX), Zone-Melting Recrystallization (ZMR) of polysilicon, Epitaxial Lateral Overgrowth (ELO), Full Isolation by Porous Oxidized Silicon (FIPOS), and Wafer Bonding (WB).
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Grundlagen der betrieblichen Personalpolitik. In response to intrinsic problems (large values of the sheet resistance, full depletion, in-depth inhomogeneity, etc.) and new opportunities (substrate bias influence), more refined experimental setup and modeling are necessary.
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https://doi.org/10.1007/978-3-322-85672-2-hardened CMOS circuits, the advanced CMOS ULSI, high/low voltage, high temperature devices, three-dimensional circuits, and sensors. Some innovative and speculative components will be presented in the last section.
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Introduction,con technology is now facing very fundamental limitations. At this point, the potential of SOI technologies has become very attractive. SOI devices are more tolerant to the constraints of scaling-down rules, and they perform superbly.
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