書目名稱 | Effects of Radiation on Semiconductors | 編輯 | Viktor Sergeevich Vavilov | 視頻video | http://file.papertrans.cn/303/302873/302873.mp4 | 圖書封面 |  | 描述 | The effects of electromagnetic radiation and high-energy par- ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza- tion, i. e. , the generation of excess charge carriers); and(b) dis- turbance of the periodic structure of the crystal, i. e. , the forma- tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of "radiation de- fects" is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi- conductors. The same is true of photoelectric and similar phe- nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter- esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radi | 出版日期 | Book 1965 | 關(guān)鍵詞 | crystal; electron; semiconductor | 版次 | 1 | doi | https://doi.org/10.1007/978-1-4899-2720-0 | isbn_softcover | 978-1-4899-2722-4 | isbn_ebook | 978-1-4899-2720-0 | copyright | Springer Science+Business Media New York 1965 |
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