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Titlebook: Effective Electron Mass in Low-Dimensional Semiconductors; Sitangshu Bhattacharya,Kamakhya Prasad Ghatak Book 2013 Springer-Verlag Berlin

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發(fā)表于 2025-3-21 18:49:40 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors
編輯Sitangshu Bhattacharya,Kamakhya Prasad Ghatak
視頻videohttp://file.papertrans.cn/303/302754/302754.mp4
概述Provides a treatment of the effective electron mass in nanodevices.Explains changes of the band structure of optoelectronic semiconductors by intense electric fields and light waves.Gives insight into
叢書名稱Springer Series in Materials Science
圖書封面Titlebook: Effective Electron Mass in Low-Dimensional Semiconductors;  Sitangshu Bhattacharya,Kamakhya Prasad Ghatak Book 2013 Springer-Verlag Berlin
描述This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirant
出版日期Book 2013
關(guān)鍵詞EEM book; EEM review; effective electron mass, EEM; low dimensional semiconductors; non-parabolic Semico
版次1
doihttps://doi.org/10.1007/978-3-642-31248-9
isbn_softcover978-3-642-43864-6
isbn_ebook978-3-642-31248-9Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer-Verlag Berlin Heidelberg 2013
The information of publication is updating

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The EEM in Nonparabolic Semiconductors Under Magnetic Quantizationed either by solving the single-particle time-independent Schr?dinger differential equation in the presence of a quantizing magnetic field or by using the operator method. The quantizing magnetic field tends to remove the degeneracy and increases the band gap.
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Book 2013n this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirant
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發(fā)表于 2025-3-22 19:46:26 | 只看該作者
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The EEM in Ultrathin Films (UFs) of Nonparabolic SemiconductorsIt must be noted that among the various definitions of the effective electron mass (e.g effective acceleration mass, density-of-state effective mass, concentration effective mass, conductivity effective mass, Faraday rotation effective mass, etc) [2], it is the effective momentum mass that should be
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發(fā)表于 2025-3-23 04:50:45 | 只看該作者
The EEM in Nipi Structures of Nonparabolic Semiconductors SL the periodic potential is due to a change in the band gap of two materials. In doping SLs, the periodicity is space-charge induced and in addition a homogeneous material is used. With the advent of modern experimental techniques of fabricating nanomaterials, it is possible to grow semiconductor
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發(fā)表于 2025-3-23 08:07:35 | 只看該作者
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