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Titlebook: EXAFS Spectroscopy; Techniques and Appli B. K. Teo,D. C. Joy Book 1981 Springer Science+Business Media New York 1981 EELS.X-ray.catalyst.el

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書目名稱EXAFS Spectroscopy
副標(biāo)題Techniques and Appli
編輯B. K. Teo,D. C. Joy
視頻videohttp://file.papertrans.cn/301/300637/300637.mp4
圖書封面Titlebook: EXAFS Spectroscopy; Techniques and Appli B. K. Teo,D. C. Joy Book 1981 Springer Science+Business Media New York 1981 EELS.X-ray.catalyst.el
描述This book on Extended X-Ray Absorption Fine Structure (EXAFS) Spectroscopy grew out of a symposium, with the same title, organized by us at the 1979 Meeting of the Materials Research Society (MRS) in Boston, MA. That meeting provided not only an overview of the theory, instrumentation and practice of EXAFS Spectroscopy as currently employed with photon beams, but also a forum for a valuable dialogue between those using the conventional approach and those breaking fresh ground by using electron energy loss spectroscopy (EELS) for EXAFS studies. This book contains contributions from both of these groups and provides the interested reader with a detailed treatment of all aspects of EXAFS spectroscopy, from the theory, through consideration of the instrumentation for both photon and electron beam purposes, to detailed descriptions of the applications and physical limitations of these techniques. While some of the material was originally presented at the MRS meeting all of the chapters have been specially written for this book and contain much that is new and significant.
出版日期Book 1981
關(guān)鍵詞EELS; X-ray; catalyst; electron microscope; electron microscopy; energy; fluorescence; high pressure; societ
版次1
doihttps://doi.org/10.1007/978-1-4757-1238-4
isbn_softcover978-1-4757-1240-7
isbn_ebook978-1-4757-1238-4
copyrightSpringer Science+Business Media New York 1981
The information of publication is updating

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Disorder Effects in the EXAFS of Metals and Semiconductors in the Solid and Liquid States,local structural order about the X-ray absorbing atom varied from the order of metallic single crystals. at 10K to the disorder. of amorphous semiconductors and metallic glasses. Usually, the structural analyses proceeded under the assumption, frequently implicit, that the distribution of nearest at
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