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Titlebook: EMI-Resilient Amplifier Circuits; Marcel J. van der Horst,Wouter A. Serdijn,André C. Book 2014 Springer International Publishing Switzerla

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21#
發(fā)表于 2025-3-25 06:04:24 | 只看該作者
Design of ,-Resilient Single-Stage Amplifiers,It is well known that all amplifier types suffer from distortion. Less known, however, is that all amplifiers, including negative-feedback amplifiers, are to a certain extent susceptible to interfering out-of-band signals from the environment called electromagnetic interference (.).
22#
發(fā)表于 2025-3-25 08:11:26 | 只看該作者
23#
發(fā)表于 2025-3-25 14:09:48 | 只看該作者
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發(fā)表于 2025-3-25 16:44:02 | 只看該作者
25#
發(fā)表于 2025-3-25 22:25:33 | 只看該作者
EMI-Resilient Amplifier Circuits978-3-319-00593-5Series ISSN 1872-082X Series E-ISSN 2197-1854
26#
發(fā)表于 2025-3-26 03:26:55 | 只看該作者
https://doi.org/10.1007/978-1-4020-8891-9nal power. For each of the three limitations the system has to be optimized. In a structured design process, functionality of the system is split into subsystems that can be optimized separately of each other.
27#
發(fā)表于 2025-3-26 04:30:43 | 只看該作者
https://doi.org/10.1007/978-981-15-5515-2junction transistor (.), the metal-oxide-semiconductor field-effect transistor (.) and the field-effect transistor operating with a reverse biased gate-source junction. Both the junction field-effect transistor (.) and the metal-semiconductor field effect transistor (.) belong to the latter type.
28#
發(fā)表于 2025-3-26 10:13:00 | 只看該作者
Language and Narration in Céline’s Writings accuracy of the transfers, special combinations of active devices have been developed. These combinations often consist of two active devices connected in such a way that the total behavior of the combination is that of one active device with improved behavior.
29#
發(fā)表于 2025-3-26 13:48:14 | 只看該作者
30#
發(fā)表于 2025-3-26 17:14:47 | 只看該作者
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