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Titlebook: Dynamics on Surfaces; Proceedings of the S Bernard Pullman,Joshua Jortner,Benjamin Gerber Conference proceedings 1984 D. Reidel Publishing

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樓主: 珍愛
31#
發(fā)表于 2025-3-27 00:56:40 | 只看該作者
Ilona Kovács,António Brand?o Monizrn. The second contains the phonon operators and is responsible for the inelastic effects. In the T matrix equation the elastic potential is projected out. The total T matrix element is then given by its elastic component to which is added an expansion containing the phonon operatorsand the coupling
32#
發(fā)表于 2025-3-27 03:43:19 | 只看該作者
Daniel B. Cornfield,Randy Hodsonn processes are treated as examples. In the case of quantum mechanics, a theoretical formulation is presented capable of handling atomic disorder on surfaces. The aproach is based on an approximation which is best in the quantum long wavelength regime. Some simple illustrations considering scatterin
33#
發(fā)表于 2025-3-27 07:00:46 | 只看該作者
Daniel B. Cornfield,Randy Hodson collisions. The model potential is a pairwise additive one which correctly incorporates the fact that Δm. — transitions occur only for corrugated surfaces (provided the quantization axis is chosen to be the average surface normal). The principal results are; a) Δm. — transitions are sensitive to la
34#
發(fā)表于 2025-3-27 12:31:16 | 只看該作者
35#
發(fā)表于 2025-3-27 13:40:49 | 只看該作者
36#
發(fā)表于 2025-3-27 18:15:07 | 只看該作者
37#
發(fā)表于 2025-3-27 23:52:20 | 只看該作者
38#
發(fā)表于 2025-3-28 05:36:54 | 只看該作者
39#
發(fā)表于 2025-3-28 07:02:03 | 只看該作者
TQM Structure and top-down requirementstaking place on the surface, the surface can shift the equilibrium constant provided that the surface temperature is kept different from the ambient gas temperature. The magnitude of the effect is governed by the energy accommodation of the surface. Another way of stating the result is that measurin
40#
發(fā)表于 2025-3-28 11:02:14 | 只看該作者
Harry E. Ruda (Assistant Professor)i (100) and graphite serve as examples of how surface ionization can provide information about the surfaces and their interactions with the atoms. The Si surface appears to undergo a phase transition at T. = 980 ± 20K. At higher temperatures the atoms move freely over what we presume is a relatively
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