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Titlebook: Domains in Ferroic Crystals and Thin Films; Alexander K. Tagantsev,L. Eric Cross,Jan Fousek Book 2010 Springer-Verlag New York 2010 Alexan

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11#
發(fā)表于 2025-3-23 13:47:42 | 只看該作者
Den Wandel selbst zum Thema machen that play the decisive role in many recent applications. But before entering this subject in Chap. 8, we wish to describe experimental methods used for obtaining integral data about such phenomena. We have in mind the data that reflect domain wall motion and other mechanisms involved in the process
12#
發(fā)表于 2025-3-23 17:19:16 | 只看該作者
13#
發(fā)表于 2025-3-23 20:29:48 | 只看該作者
Anmerkungen zu neuen Unternehmensparadigmenrizons of their applications as functional materials in non-volatile memories in micro-electronics, mechanical sensors, actuators in micromechanics, pyroelectric detectors, and in tunable microwave and electro-optical devices. When speaking of ferroelectric thin films, one usually means films of thi
14#
發(fā)表于 2025-3-24 00:50:00 | 只看該作者
15#
發(fā)表于 2025-3-24 04:44:51 | 只看該作者
Vertrauen als kritischer Faktortructure. In Chap. 4 we have pointed out that several domain-imaging methods provided information about the wall thickness; in Sect. 6.1 we wish to describe some of these observations in more detail. In this section, we will also present available experimental data on thickness and surface tension of domain walls.
16#
發(fā)表于 2025-3-24 08:44:09 | 只看該作者
17#
發(fā)表于 2025-3-24 13:14:28 | 只看該作者
18#
發(fā)表于 2025-3-24 16:39:08 | 只看該作者
Fundamentals of Ferroic Domain Structures,tes and on how they can be distinguished. It is this information that forms the background of any considerations about domain reorientation processes, about domain walls, as well as about properties and applications of multidomain samples.
19#
發(fā)表于 2025-3-24 20:00:04 | 只看該作者
20#
發(fā)表于 2025-3-25 00:17:26 | 只看該作者
Switching Properties: Basic Methods and Characteristics,, growth of nucleated or of already existing domains, and their coalescence. Such integral data provide the basic information on characteristics of the switching process as a whole, like its speed, its dependence on the applied force, on the boundary conditions, or on temperature.
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