Titlebook: Disorder and Order in the Solid State; Concepts and Devices Roger W. Pryor,Brian B. Schwartz,Stanford R. Ovshi Book 1988 Springer Science+B

要旨

書目名稱Disorder and Order in the Solid State影響因子(影響力)




書目名稱Disorder and Order in the Solid State影響因子(影響力)學(xué)科排名




書目名稱Disorder and Order in the Solid State網(wǎng)絡(luò)公開度




書目名稱Disorder and Order in the Solid State網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Disorder and Order in the Solid State被引頻次




書目名稱Disorder and Order in the Solid State被引頻次學(xué)科排名




書目名稱Disorder and Order in the Solid State年度引用




書目名稱Disorder and Order in the Solid State年度引用學(xué)科排名




書目名稱Disorder and Order in the Solid State讀者反饋




書目名稱Disorder and Order in the Solid State讀者反饋學(xué)科排名

使尷尬

Recent Developments in Ovonic Threshold Switching Device Technologyterning and dry etching. It required the development of a conformal, inorganic passivation layer. That was achieved, assuring inherent high stability and long life. The switching material in the device has also been modified to incorporate hydrogen, which significantly improves the stability and uni

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BLAZE

,Zeichnen für Fortgeschrittene,terning and dry etching. It required the development of a conformal, inorganic passivation layer. That was achieved, assuring inherent high stability and long life. The switching material in the device has also been modified to incorporate hydrogen, which significantly improves the stability and uni

PLUMP

Disk199

Book 1988h broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu

Disk199

Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu978-1-4612-8299-0978-1-4613-1027-3

febrile

Book 1988y held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has m

FLACK

Switching and Memory Effects in Thin Amorphous Chalcogenide Films — Thermophonic Studiesurther, the results concur with a model where the sample heats during the delay time; the heating causes the fields to rearrange and a critical value is reached near an electrode, whereby a carrier generation process is encouraged.

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On the Impedance Calculation of Thick MIM Barriers of the (M.-I-M.) barrier leading directly to an incremental equivalent circuit representation is given. It is found that the device may be modeled satisfactorily in the low frequency range for all bias conditions by a resistor connected in parallel with a capacitor.