Titlebook: Digital Memory and Storage; Walter E. Proebster Book 1978 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH, Braunschweig 1978 Access.Computer

VEN

https://doi.org/10.1057/9780230287754ble memory is moving out of the research laboratories to the development of engineering models. Several companies have installed pilot lines in order to study fabrication and yield problems and to provide samples for various in-house and external applications.

PANT

Read-Only Memories with Magnetic Components or with Integrated Semiconductor Circuitsbiguous and generally unalterable logic relationship between the signals on the input and output lines, which is determined by the information they have stored. Depending on the particular application, the predominant aspect may be in one case that of a data memory, in another case that of a logic network.

cornucopia

Allege

Electromechanical Mass Storage Units — Disk Filesh are worked on directly by the processor are, in spite of their substantial growth in the past years, in no way capable of accepting all necessary data. The sum of all data relevant to a system is thus filed in the secondary storage units. Disk files and magnetic tape units are the most important secondary storage units.

dry-eye

Fabrication Technology and Physical Fundamentals of Components Used for Semiconductor Memories last few years. Microcomputers are a main application field for the most important types of semiconductor memories as shown in Table 1. Fundamentally two groups of memories have to be distinguished, namely read-write memories (RWMs), most of them random-access memories (RAMs),

ureter

Readout Methods and Readout Circuits for Dynamic Charge-Storage Elementsvelopment was the principle of dynamic charge storage. This principle involves the storage of mobile charge at the Si-SiO. interface. Depending on whether a small or large number of charges are stored, a binary “1” or “O” is present in the memory cell.

準(zhǔn)則

Physical Principles of Magnetic Bubble Domain Memory Deviceswall. The magnetization in the domain wall rotates through 180 degrees. In a bubble domain memory the presence of a magnetic bubble at a particular place and at a particular point of time represents a digital ‘one’, and its absence represents a ‘zero’.

笨重

Ferromagnetic Domain Memorieshas been achieved in the meantime. Today, ferromagnetic domain memories are poised on the threshold of many practical applications, and they must be considered as genuine alternatives to conventional storage devices.

CRAFT

https://doi.org/10.1007/978-3-7091-1379-0 and read electronics lead to a gradual transition of the magnetization and a finite width of the readback pulse. The length of the readback pulse, mechanical limitations as well as media and electronic noise determine the highest recording density.

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