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Titlebook: Diffusion Processes in Advanced Technological Materials; Devendra Gupta (Emeritus Research Staff Member) Book 2005 Springer-Verlag Berlin

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發(fā)表于 2025-3-21 18:14:39 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Diffusion Processes in Advanced Technological Materials
編輯Devendra Gupta (Emeritus Research Staff Member)
視頻videohttp://file.papertrans.cn/280/279016/279016.mp4
概述Emphasizes interrelated diffusion along multiple path, microstructure, micro-chemistry fields of all kinds, particularly of the interfaces.Contains an entire chapter devoted to computer simulations of
圖書封面Titlebook: Diffusion Processes in Advanced Technological Materials;  Devendra Gupta (Emeritus Research Staff Member) Book 2005 Springer-Verlag Berlin
描述My 12-year-old granddaughter Nina Alesi once asked me, "Grandpa, you are a scientist at IBM, so what do you do?" I tried to reply, "Oh, I watch atoms move. . . " But before I could finish this sentence, my 7-year-old grandson Vinnie interjected, "Grandpa, do atoms play soccer?" This book is about the games atoms play in diffusion and various other properties of materials. While diffusion has been studied for more than 100 years in solids, its importance, excitement, and intellectual chal- lenges remain undiminished with time. It is central to understanding the relationship between the structure and properties of naturally occurring and synthetic materials, which is at the root of current technological development and innovations. The diversity of material has led to spec- tacular progress in functional inorganics, polymers, granular materials, photonics, complex oxides, metallic glasses, quasi-crystals, and strongly correlated electronic materials. The integrity of complex materials pack- ages is determined by diffusion, a highly interactive and synergic phe- nomenon that interrelates to the microstructure, the microchemistry, and the superimposed physical fields. While the various
出版日期Book 2005
關鍵詞Helium-Atom-Streuung; Metall; Semiconductor; Surface science; crystal; electronics; materials science; nano
版次1
doihttps://doi.org/10.1007/978-3-540-27470-4
isbn_softcover978-3-642-06019-9
isbn_ebook978-3-540-27470-4
copyrightSpringer-Verlag Berlin Heidelberg 2005
The information of publication is updating

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Solid State Diffusion and Bulk Properties,relation factor .=lattice parameter .=jump frequency Δ.*=activation entropy Δ.*=activation enthalpy .=universal gas constant .=temperature, in degrees Kelvin Furthermore, the enthalpy and free energy (Δ.*)of activation for diffusion are given by:
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Bulk and Grain Boundary Diffusion in Intermetallic Compounds, metals. The intermetallic compounds exist in a variety of lattice structures: from the simplest, such as .2 (NiAl, FeAl) and .1. (TiAl, CuAu), to very sophisticated configurations, such as quasicrystalline .-AlCuFe. The short- and long-range order are important phenomena of the intermetallic compou
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Measurement of Stresses in Thin Films and Their Relaxation,ed, using only small amounts of materials. For example, the high density and fast performance of modern computers have been possible due to the incorporation of multilayer thin-film structures coupled with submicron photolithography on the back of the active devices formed in Si chips. Because thin-
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Electromigration in Cu Thin Films,has increased each and every year since its initial commercialization in 1997 by DBM.[.] Chips with Cu wiring have improved conductivity, which has resulted in reduced RC time delays for wiring, where R is resistance and C is capacitance. When IC chip technology is extended below 0.2-μm dimension, t
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