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Titlebook: Dielectric Breakdown in Gigascale Electronics; Time Dependent Failu Juan Pablo Borja,Toh-Ming Lu,Joel Plawsky Book 2016 The Author(s) 2016

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發(fā)表于 2025-3-21 18:16:19 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Dielectric Breakdown in Gigascale Electronics
副標題Time Dependent Failu
編輯Juan Pablo Borja,Toh-Ming Lu,Joel Plawsky
視頻videohttp://file.papertrans.cn/279/278426/278426.mp4
概述Comprehensively describes established and novel concepts for time-to-failure modeling of low permittivity, nano-porous dielectric films.Introduces key concepts from reliability engineering combined wi
叢書名稱SpringerBriefs in Materials
圖書封面Titlebook: Dielectric Breakdown in Gigascale Electronics; Time Dependent Failu Juan Pablo Borja,Toh-Ming Lu,Joel Plawsky Book 2016 The Author(s) 2016
描述This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics.? Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will ga
出版日期Book 2016
關(guān)鍵詞Chip Interconnects; Dielectric Breakdown; Interconnect Reliability Science; Low-k Interconnect; Metal Ca
版次1
doihttps://doi.org/10.1007/978-3-319-43220-5
isbn_softcover978-3-319-43218-2
isbn_ebook978-3-319-43220-5Series ISSN 2192-1091 Series E-ISSN 2192-1105
issn_series 2192-1091
copyrightThe Author(s) 2016
The information of publication is updating

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發(fā)表于 2025-3-22 00:06:09 | 只看該作者
Book 2016from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics.? Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will ga
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Dielectric Breakdown in Gigascale Electronics978-3-319-43220-5Series ISSN 2192-1091 Series E-ISSN 2192-1105
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發(fā)表于 2025-3-22 13:57:50 | 只看該作者
https://doi.org/10.1007/978-3-662-09547-8tes when the dielectric is subjected to electrical stress beyond a critical point. In general, dielectric breakdown mechanisms in amorphous films can be categorized as either intrinsic or extrinsic in nature (He and Sun, ., 2012, p.166). Intrinsic failure corresponds to damage caused by the transpor
7#
發(fā)表于 2025-3-22 18:05:39 | 只看該作者
https://doi.org/10.1007/978-3-662-09547-8The fundamental concepts for each theory are presented as initially proposed by the authors. Some of the models explained in this section include the ., 1/., ., power-law, and the metal-catalyzed failure model. Commentary on the limitations for each model is provided. In the latter part of this chap
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發(fā)表于 2025-3-22 23:58:02 | 只看該作者
Diagnostik, Nosologie, Klassifikatione range of instruments includes both bench-top and large throughput systems. Bench-top systems are conventionally used to gather information about fundamental material and device properties, while large throughput systems provide significant advantages for gathering statistically meaningful data on
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發(fā)表于 2025-3-23 01:27:35 | 只看該作者
Affektive Psychosen: Melancholie und Manielained along with potential limitations. The chapter is divided into three parts: breakdown assessment, material characterization, and interfacial/bulk composition analysis. Tests presented in this section for breakdown will include constant bias, constant current, ramped voltage, ramped current, an
10#
發(fā)表于 2025-3-23 07:56:22 | 只看該作者
Das Problem der Involutionspsychosen. Techniques such as ramped voltage sweeps and bipolar applied field tests are utilized to characterize fundamental aspects of breakdown in thin low-. films. We studied intrinsic breakdown using inert (Au) and self-limiting electrodes (Al). Metal-catalyzed failure was investigated by employing react
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