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Titlebook: Device Applications of Silicon Nanocrystals and Nanostructures; Nobuyoshi Koshida Book 2009 Springer-Verlag US 2009 Biosensor.ballistic el

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發(fā)表于 2025-3-21 18:56:06 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Device Applications of Silicon Nanocrystals and Nanostructures
編輯Nobuyoshi Koshida
視頻videohttp://file.papertrans.cn/271/270327/270327.mp4
概述Offers the first comprehensive treatment of recent advances in quantum-sized silicon device technology.Presents systematic and vivid descriptions from a technological viewpoint, providing a realistic
叢書名稱Nanostructure Science and Technology
圖書封面Titlebook: Device Applications of Silicon Nanocrystals and Nanostructures;  Nobuyoshi Koshida Book 2009 Springer-Verlag US 2009 Biosensor.ballistic el
描述.Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI..
出版日期Book 2009
關(guān)鍵詞Biosensor; ballistic electron emitter; dielectrics; electroluminescence diode, microcavity, and wavegui
版次1
doihttps://doi.org/10.1007/978-0-387-78689-6
isbn_softcover978-1-4899-7737-3
isbn_ebook978-0-387-78689-6Series ISSN 1571-5744 Series E-ISSN 2197-7976
issn_series 1571-5744
copyrightSpringer-Verlag US 2009
The information of publication is updating

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Book 2009y described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semicond
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Device Applications of Silicon Nanocrystals and Nanostructures978-0-387-78689-6Series ISSN 1571-5744 Series E-ISSN 2197-7976
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978-1-4899-7737-3Springer-Verlag US 2009
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