Titlebook: Defects in SiO2 and Related Dielectrics: Science and Technology; G. Pacchioni,L. Skuja,D. L. Griscom Book 2000 Springer Science+Business M

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INTERACTION OF SiO2 GLASSES WITH HIGH ENERGY ION BEAMS AND VACUUM UV EXCIMER LASER PULSEScult due to its thermal expansion coefficient that is ~30 times larger than that of SiO. glass. Thus, SiO.-based glasses would be veiy suitable as photomask materials, provided that the necessary specifications for transparency and radiation resistance can be met. In this article, we describe defect

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GE AND SN DOPING IN SILICA: STRUCTURAL CHANGES, OPTICALLY ACTIVE DEFECTS, PARAMAGNETIC SITESnsic defects (as oxygen vacancies) by changing the thermochemical conditions during the material synthesis [2]. Indeed, Ge and Sn doping cause perturbations in the structural and defect-related properties, and these are important for the occurrence of photoconversion of optically active defects and

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獸皮

PERIODIC UV-INDUCED INDEX MODULATIONS IN DOPED-SILICA OPTICAL FIBERS: FORMATION AND PROPERTIES OF THpplications have motivated continued intense study, a brief appendix introduces several FBG-based technologies in terms of relevant intrinsic properties. A central objective is to direct the reader to readily available original publications from the growing community of involved researchers. In part

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https://doi.org/10.1007/978-1-4899-0792-9d voltage shifts in MOS transistors. It is easy to imagine how improvements in identification and control of these defects could result in billions of dollars in cost savings to photonics and semiconductor industries over the next decade.

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BROOK

Fault Diagnosis of Discrete-Event Systemscult due to its thermal expansion coefficient that is ~30 times larger than that of SiO. glass. Thus, SiO.-based glasses would be veiy suitable as photomask materials, provided that the necessary specifications for transparency and radiation resistance can be met. In this article, we describe defect