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Titlebook: CdTe and CdZnTe Materials; Material Properties Kris Iniewski Book 2024 The Editor(s) (if applicable) and The Author(s), under exclusive li

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樓主: rupture
31#
發(fā)表于 2025-3-26 23:54:36 | 只看該作者
https://doi.org/10.1007/978-3-031-64521-1CdTe and CZT materials for Photovoltaics and X-ray Detection; Next Generation X-ray Detector for Medi
32#
發(fā)表于 2025-3-27 02:27:55 | 只看該作者
978-3-031-64523-5The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
33#
發(fā)表于 2025-3-27 06:41:24 | 只看該作者
34#
發(fā)表于 2025-3-27 12:04:32 | 只看該作者
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發(fā)表于 2025-3-27 14:03:24 | 只看該作者
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發(fā)表于 2025-3-27 20:58:00 | 只看該作者
37#
發(fā)表于 2025-3-28 01:09:52 | 只看該作者
Book 2024eld. The conversion of the X-ray and gamma-ray signal into analogue/digital value will be covered in some chapters. Some would also provide a review of CMOS chips for CdTe and CdZnTe image sensors. This book serves as an excellent reference for people already working in the field as well as for people wishing to enter it..
38#
發(fā)表于 2025-3-28 02:54:41 | 只看該作者
39#
發(fā)表于 2025-3-28 06:44:42 | 只看該作者
Explicit Processing Steps on the Melt Growth of Stoichiometric Cd0.80Zn0.20Te Crystal for High-Enerls of stoichiometric composition with high crystallinity quality. These practices include (A) initializing the homogenization of CdZnTe from pure elements via a traveling zone process, (B) minimizing the contamination of copper (Cu) and other elements by homogenizing the starting material ampoule un
40#
發(fā)表于 2025-3-28 11:20:51 | 只看該作者
Advancements in CdZnTe Detectors with the Drift Strip Method, as well as scientific space instrumentation..Although CdZnTe possesses several desirable material properties for use as a room temperature semiconductor detector, it also exhibits certain drawbacks. Specifically, the poor charge transport properties of holes which are significantly lower than those
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