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Titlebook: Crystalline Semiconducting Materials and Devices; Paul N. Butcher,Norman H. March,Mario P. Tosi Book 1986 Springer Science+Business Media

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發(fā)表于 2025-3-21 18:44:32 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Crystalline Semiconducting Materials and Devices
編輯Paul N. Butcher,Norman H. March,Mario P. Tosi
視頻videohttp://file.papertrans.cn/241/240653/240653.mp4
叢書名稱Physics of Solids and Liquids
圖書封面Titlebook: Crystalline Semiconducting Materials and Devices;  Paul N. Butcher,Norman H. March,Mario P. Tosi Book 1986 Springer Science+Business Media
描述This book is concerned primarily with the fundamental theory underlying the physical and chemical properties of crystalIine semiconductors. After basic introductory material on chemical bonding, electronic band structure, phonons, and electronic transport, some emphasis is placed on surface and interfacial properties, as weil as effects of doping with a variety of impurities. Against this background, the use of such materials in device physics is examined and aspects of materials preparation are discussed briefty. The level of presentation is suitable for postgraduate students and research workers in solid-state physics and chemistry, materials science, and electrical and electronic engineering. Finally, it may be of interest to note that this book originated in a College organized at the International Centre for Theoretical Physics, Trieste, in Spring 1984. P. N. Butcher N. H. March M. P. Tosi vii Contents 1. Bonds and Bands in Semiconductors 1 E. Mooser 1. 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 2. The Semiconducting Bond . . . . . . . . . . . . .
出版日期Book 1986
關(guān)鍵詞communication; electronic structure; material; materials science; model; semiconductor; semiconductor devi
版次1
doihttps://doi.org/10.1007/978-1-4757-9900-2
isbn_softcover978-1-4757-9902-6
isbn_ebook978-1-4757-9900-2
copyrightSpringer Science+Business Media New York 1986
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發(fā)表于 2025-3-21 23:20:21 | 只看該作者
ed potential. A direct result of this has been the development of the a-Si field-effect transistor (FET), discussed in Section 16.3, which could find applications in large-area addressable displays, in addressable image-sensing arrays, and in logic circuits.
板凳
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5#
發(fā)表于 2025-3-22 11:55:24 | 只看該作者
Book 1986c introductory material on chemical bonding, electronic band structure, phonons, and electronic transport, some emphasis is placed on surface and interfacial properties, as weil as effects of doping with a variety of impurities. Against this background, the use of such materials in device physics is
6#
發(fā)表于 2025-3-22 13:24:36 | 只看該作者
7#
發(fā)表于 2025-3-22 19:07:02 | 只看該作者
James K. Galbraith,Anthony Heathucially relies on progress in the physics of semiconductors.. Supported and stimulated by the development of forefront technologies, basic research continues to blossom on this branch of materials science, in a unique interplay between pure and applied physics..
8#
發(fā)表于 2025-3-22 23:08:53 | 只看該作者
Daniel Stedman Jones,Ben Jacksonc semiconductors, namely semiconductors containing paramagnetic impurities, and in Section 9.4 half-metallic ferromagnets, which are metallic for spin-up electrons and semiconducting for spin-down electrons.
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發(fā)表于 2025-3-23 01:51:37 | 只看該作者
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發(fā)表于 2025-3-23 07:07:35 | 只看該作者
The Electronic Structure of Surfaces and Interfaces, the best example for which those new states play an important role, the reason being that new states appear at the Fermi level. These states are crucial to understanding junctions between, say, metals and semiconductors, and for clean semiconductor surfaces.
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