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Titlebook: Crystal Pulling from the Melt; Donald T. J. Hurle Book 1993 Springer-Verlag Berlin Heidelberg 1993 Kristallchemie.Kristallisation.Kristall

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發(fā)表于 2025-3-21 17:11:49 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱Crystal Pulling from the Melt
編輯Donald T. J. Hurle
視頻videohttp://file.papertrans.cn/241/240641/240641.mp4
圖書(shū)封面Titlebook: Crystal Pulling from the Melt;  Donald T. J. Hurle Book 1993 Springer-Verlag Berlin Heidelberg 1993 Kristallchemie.Kristallisation.Kristall
描述Crystal pulling is an industrial process and provides the bulk of semiconductor crystals for the semiconductor industry. Initially a purely empirical process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attempt to strengthen the interface between the practical crystal grower and the applied mathematician involved in analytical and computer modelling. Its focus is on the physics, chemistry and metallurgy of the process. .From reviews.: "... There is a need for a modern, non-trivial text on Czochralski growth ... and Dr. Hurle is eminently suited to write such a text."; "Dr. Hurle is probably uniquely qualified to write a book on ... (the Czochralski) growth process. ... He has published a great deal of very substantial as well as innovative work in this area."
出版日期Book 1993
關(guān)鍵詞Kristallchemie; Kristallisation; Kristallphysik; Kristallwachstum; Metall; chemistry; crystal; heat transfe
版次1
doihttps://doi.org/10.1007/978-3-642-78208-4
isbn_softcover978-3-642-78210-7
isbn_ebook978-3-642-78208-4
copyrightSpringer-Verlag Berlin Heidelberg 1993
The information of publication is updating

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沙發(fā)
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板凳
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Elements of the Process,t of the heater power, a crystal of the desired diameter can be grown. The whole assembly is maintained in an envelope which permits control of the ambient gas and enables visual observation of the crystal to be made. Figure 2.2 shows a small silicon single crystal being pulled from a melt contained in a silica crucible heated by RF induction.
地板
發(fā)表于 2025-3-22 08:08:05 | 只看該作者
5#
發(fā)表于 2025-3-22 10:52:51 | 只看該作者
Book 1993process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attempt to stre
6#
發(fā)表于 2025-3-22 14:39:48 | 只看該作者
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Future Developments,tact with molten silicon sets a practical limit to any pseudo-continuous process with this material. Further developments in the control of oxygen and carbon distribution in silicon are required. Achievments of these goals may involve the use of a cusped magnetic field but that is, at present, not clearly resolved.
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發(fā)表于 2025-3-22 22:04:07 | 只看該作者
empirical process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attem
9#
發(fā)表于 2025-3-23 04:58:28 | 只看該作者
Techniques and Technology,ifferent heaters, chambers etc. Commercial pullers, on the other hand, are designed for one specific material; indeed often for just one specific size and specification of single crystal of that material.
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發(fā)表于 2025-3-23 06:11:46 | 只看該作者
Heat Transport,-melt interface as a thermodynamic phase boundary whose shape represents the solution of the problem and not a boundary condition. Such problems are known as Stefan problems (see for example Ockendon and Tayler [79]). First, though, we determine the temperature field in the cooling crystal.
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