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Titlebook: Crystal Growth; Principles and Progr A. W. Vere Book 1987 Springer Science+Business Media New York 1987 Phase.defects.epitaxy.material.semi

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發(fā)表于 2025-3-21 19:02:49 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Crystal Growth
副標(biāo)題Principles and Progr
編輯A. W. Vere
視頻videohttp://file.papertrans.cn/241/240631/240631.mp4
叢書名稱Updates in Applied Physics and Electrical Technology
圖書封面Titlebook: Crystal Growth; Principles and Progr A. W. Vere Book 1987 Springer Science+Business Media New York 1987 Phase.defects.epitaxy.material.semi
描述This book is the second in a series of scientific textbooks designed to cover advances in selected research fields from a basic and general viewpoint, so that only limited knowledge is required to understand the significance of recent developments. Further assistance for the non-specialist is provided by the summary of abstracts in Part 2, which includes many of the major papers published in the research field. Crystal Growth of Semiconductor Materials has been the subject of numerous books and reviews and the fundamental principles are now well-established. We are concerned chiefly with the deposition of atoms onto a suitable surface - crystal growth - and the generation of faults in the atomic structure during growth and subsequent cooling to room temperature - crystal defect structure. In this book I have attempted to show that whilst the fundamentals of these processes are relatively simple, the complexities of the interactions involved and the individuality of different materials systems and growth processes have ensured that experimentally verifiable predictions from scientific principles have met with only limited success - good crystal growth remains an art. However, recent
出版日期Book 1987
關(guān)鍵詞Phase; defects; epitaxy; material; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4757-9897-5
isbn_softcover978-1-4757-9899-9
isbn_ebook978-1-4757-9897-5
copyrightSpringer Science+Business Media New York 1987
The information of publication is updating

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沙發(fā)
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Growth from the Liquid Phase,tructive to begin with a brief review of the basic techniques, this chapter is intended to emphasise the similarities underlying the apparent wide diversity of techniques. It also focuses attention on recent developments in Czochralski (CZ) and Bridgman growth, since these techniques are increasingl
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Metaplectic groups and representations,When man first started to grow crystals he used the ways already perfected in nature, suspending small ‘seed’ crystals of the required material within a supersaturated solution or flux. Although frequently beautiful, the resulting crystals were small and imperfect, containing inclusions, impurities and stacking faults in the crystal lattice.
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Introduction,When man first started to grow crystals he used the ways already perfected in nature, suspending small ‘seed’ crystals of the required material within a supersaturated solution or flux. Although frequently beautiful, the resulting crystals were small and imperfect, containing inclusions, impurities and stacking faults in the crystal lattice.
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https://doi.org/10.1007/978-1-4757-9897-5Phase; defects; epitaxy; material; semiconductor
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