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Titlebook: Cryogenic Operation of Silicon Power Devices; Ranbir Singh,B. Jayant Baliga Book 1998 Springer Science+Business Media New York 1998 Diode.

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書目名稱Cryogenic Operation of Silicon Power Devices
編輯Ranbir Singh,B. Jayant Baliga
視頻videohttp://file.papertrans.cn/241/240503/240503.mp4
叢書名稱Power Electronics and Power Systems
圖書封面Titlebook: Cryogenic Operation of Silicon Power Devices;  Ranbir Singh,B. Jayant Baliga Book 1998 Springer Science+Business Media New York 1998 Diode.
描述The advent of low temperature superconductors in the early 1960‘s converted what had been a laboratory curiosity with very limited possibilities to a prac- tical means of fabricating electrical components and devices with lossless con- ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans- mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper- ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob- tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of e
出版日期Book 1998
關鍵詞Diode; JFET; MOSFET; Thyristor; control; diodes; environment; material; model; tables; transistor
版次1
doihttps://doi.org/10.1007/978-1-4615-5751-7
isbn_softcover978-1-4613-7635-4
isbn_ebook978-1-4615-5751-7Series ISSN 2196-3185 Series E-ISSN 2196-3193
issn_series 2196-3185
copyrightSpringer Science+Business Media New York 1998
The information of publication is updating

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978-1-4613-7635-4Springer Science+Business Media New York 1998
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Power Electronics and Power Systemshttp://image.papertrans.cn/d/image/240503.jpg
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Beginning the Role-play Workshopon of certain key silicon properties with temperature. In silicon, a reduction in temperature has an affect on the availability of free carriers, forbidden bandgap, intrinsic carrier concentration, carrier mobilities, carrier lifetimes and impact ionization coefficients. This chapter summarizes the
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