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Titlebook: Contemporary Advances in Innovative and Applicable Information Technology; Proceedings of ICCAI Jyotsna Kumar Mandal,Devadatta Sinha,J.P. B

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樓主: finesse
11#
發(fā)表于 2025-3-23 09:54:30 | 只看該作者
Malignant Melanoma Detection Using Multi Layer Perceptron with Optimized Network Parameter SelectionSwarm Optimization (PSO) is used for finding the optimal number of neuron in the hidden layers of multi-layer neural network (MLP). Using a total of 1875 color, texture and shape features extracted from 170 color images from MED-NODE dataset an accuracy of 85.9% is achieved with threefold cross-vali
12#
發(fā)表于 2025-3-23 15:01:09 | 只看該作者
A New Search Space Reduction Technique for Genetic Algorithmsowerful technique for global search. However, it suffers from the problems of poor local search capability and slow convergence rate. There had been several attempts to remove these limitations of a GA in various ways. In this study, for a GA, a new search space reduction technique, which is nothing
13#
發(fā)表于 2025-3-23 20:20:51 | 只看該作者
14#
發(fā)表于 2025-3-24 02:03:31 | 只看該作者
An Integrated Blood Donation Campaign Management Systemeloping countries including India. Supply of adequate blood could be achieved through timely blood donation camps, where voluntary donors can donate blood. In India, organizations of blood donation camp are formidably less than the requirements and are not organized in a systematic way. It implies t
15#
發(fā)表于 2025-3-24 03:53:30 | 只看該作者
16#
發(fā)表于 2025-3-24 07:57:10 | 只看該作者
17#
發(fā)表于 2025-3-24 11:23:34 | 只看該作者
18#
發(fā)表于 2025-3-24 14:57:44 | 只看該作者
Computation of Peak Tunneling Current Density in Resonant Tunneling Diode Using Self-consistency Tecthe effect on peak current within tolerable limit. Effect of asymmetric material composition is also incorporated. Result is significantly pertinent for low bias applications where higher current is required, which can be obtained for nanometric device dimensions.
19#
發(fā)表于 2025-3-24 21:51:09 | 只看該作者
Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Modc layer is taken into account for realistic calculation. Pinch-off voltage dependence on material and structural parameters is estimated from static characteristics, and corresponding drain resistance is calculated. Simulated findings are very close to the previously obtained results. Result will help to design DG for low power application.
20#
發(fā)表于 2025-3-25 01:52:27 | 只看該作者
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