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Titlebook: Confined Electrons and Photons; New Physics and Appl Elias Burstein,Claude Weisbuch Book 1995 Plenum Press, New York 1995 Laser.Planar.Vaku

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51#
發(fā)表于 2025-3-30 10:24:31 | 只看該作者
52#
發(fā)表于 2025-3-30 14:19:32 | 只看該作者
Electron States in Biased Heterostructuresm wells and superlattices. Such structures are simply viewed as a sequence of different semiconductor layers grown sucessively along a well defined crystalline growth direction. The carriers’ motion along this growth direction (hereafter called the z direction) is then strongly modified by the prese
53#
發(fā)表于 2025-3-30 18:13:44 | 只看該作者
54#
發(fā)表于 2025-3-30 22:18:05 | 只看該作者
Excitonic Radiative Dynamics in Semiconductor Quantum WellsThese technologies are widely exploited in devices. The performance of optoelectronic devices is determined in part by the temporal constraints on the fundamental emission process. For example, in emitters, if the emission time is very long, there will be more opportunity for the carriers to be capt
55#
發(fā)表于 2025-3-31 03:24:38 | 只看該作者
Superlattices and Quantum Wells in Organic Semiconductors: Excitons and Optical Nonlinearitiesallowed one to control growth on the scale of a single atomic layer. This made it possible to produce high quality quantum wells that confine the motion of electrons in one dimension. The confinement quantizes the electron energy and increases the binding energy of excitons, resulting, in contrast t
56#
發(fā)表于 2025-3-31 08:09:50 | 只看該作者
Intersubband Transitions in Quantum Wells ago .. When dealing with interband optical transitions, additional features related to electron-hole interactions (see for instance exciton descriptions in this book) are coming into play and the one-electron wavefunctions and energy levels may fail to describe or predict experimental results. More
57#
發(fā)表于 2025-3-31 10:34:36 | 只看該作者
Principles of Solid State Electron Opticscal motion (geometrical optics), as well as on the level of quantum mechanical motion (wave optics). The last two decades have witnessed a surge of interest in transport phenomena in low-dimensional semiconductor systems. Examples are the study of weak localization and conductance fluctuations in tw
58#
發(fā)表于 2025-3-31 14:28:00 | 只看該作者
59#
發(fā)表于 2025-3-31 17:38:13 | 只看該作者
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