Titlebook: Compound and Josephson High-Speed Devices; Takahiko Misugi,Akihiro Shibatomi Book 1993 Springer Science+Business Media New York 1993 analo

growth-factor

https://doi.org/10.1007/978-3-662-56392-2, including epitaxial-layer preparation and processing. High-frequency characteristics and related electron transport peculiar to HBTs are discussed in Section 7.4. The performance of integrated circuits is described in Section 7.5. The last section summarizes state-of-the-art HBT technology and prospects for the future.

衍生

Introduction,uters and telecommunications systems, in order to achieve higher bit rates for operations. The motive for preparing this book was to look at the high-speed-device issue from the systems point of view. From the systems side, limitations in silicon-based device technology, such as switching speed and

languor

GaAs Materials,ing with the lowest integration density. Now the integration density has reached a level of 30 kgates gate array, or a level of 16 kbits Static RAM (SRAM). These GaAs ICs are currently being used in supercomputers.

包租車船

High-Speed Analog Integrated Circuits,tion systems in each segment are instrumentation in industrial; microwave data link, very small aperture terminal (VSAT), and fiber optics in communications; and DBS, TV, and cellular radio in the consumer market. Application systems which are under development are summarized in Table 3.1.

下船

GaAs ICs for Digital Applications,ness. GaAs IC chips consist of circuit elements and interconnections on a semi-insulating substrate. High-speed IC chips have to be mounted in low-capacitance packages for low-distortion waveform transmission. The most significant element of an IC is the switching transistor, which determines the in

泥土謙卑

HEMT Materials,uctor materials, superlattices, and heterostructure devices have been developed since the pioneering work on molecular-beam epitaxy (MBE), by J. R. Arthur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on s

BIPED

證實(shí)

流利圓滑

Josephson Digital Devices,r of devices based on the Josephson effect have been proposed, forming a field called superconducting electronics. A significant part of the progress in this field is due to digital applications of the Josephson effect.

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