Titlebook: Compound Semiconductors Strained Layers and Devices; S. Jain,M. Willander,R. Overstraeten Book 2000 Springer Science+Business Media New Yo

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Compound Semiconductors Strained Layers and Devices

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Compound Semiconductors Strained Layers and Devices978-1-4615-4441-8

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Introduction,proach [2]. It has been shown recently that their theory is equivalent to the theory of Frank and Van der Merwe and the two theories yield identical results [3]. Use of semiconductors of different bandgaps in a device was suggested by Shockley in a patent [4] in 1951. The two ideas, one of electrica

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Electrical and magnetic properties, The reason for the abrupt decrease is not understood. The PL of the Cl doped samples was dominated by donor bound excitons for Cl concentrations ? 4 × 1018 cm–3. No deep level PL was observed. The intensity of the donor bound excitonic PL increased with Cl concentration up to 1 x 1017 cm–3 and then

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Strained layer optoelectronic devices,as the temperature increases and bandgap decreases. Therefore the harmful effect of Auger recombination is more serious in mid-IR lasers. The mid-IR lasers do not yet operate at room temperature because of the limitation due to Auger recombination. Mid-IR lasers using Sb based III-V semiconductor st

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Transistors,signated as pseudomorphic or PM-HEMTs, are fabricated on GaAs substrates. InGaAs alloys with high In concentration have considerably higher mobility and larger intervalley separation in the conduction band than GaAs. For several years InGaAs strained layer devices dominated the HEMT technology [12].

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