| 書目名稱 | Compound Semiconductor Materials and Devices |
| 編輯 | Zhaojun Liu,Tongde Huang,Xinbo Zou |
| 視頻video | http://file.papertrans.cn/232/231860/231860.mp4 |
| 叢書名稱 | Synthesis Lectures on Emerging Engineering Technologies |
| 圖書封面 |  |
| 描述 | Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices. |
| 出版日期 | Book 2016 |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-031-02028-5 |
| isbn_softcover | 978-3-031-00900-6 |
| isbn_ebook | 978-3-031-02028-5Series ISSN 2381-1412 Series E-ISSN 2381-1439 |
| issn_series | 2381-1412 |
| copyright | Springer Nature Switzerland AG 2016 |
|Archiver|手機版|小黑屋|
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