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Titlebook: Compact Transistor Modelling for Circuit Design; Henk C. Graaff,Fran?ois M. Klaassen Book 1990 Springer-Verlag/Wien 1990 SPICE.circuit.cir

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發(fā)表于 2025-3-21 17:27:03 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Compact Transistor Modelling for Circuit Design
編輯Henk C. Graaff,Fran?ois M. Klaassen
視頻videohttp://file.papertrans.cn/231/230803/230803.mp4
叢書名稱Computational Microelectronics
圖書封面Titlebook: Compact Transistor Modelling for Circuit Design;  Henk C. Graaff,Fran?ois M. Klaassen Book 1990 Springer-Verlag/Wien 1990 SPICE.circuit.cir
描述During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte- grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi- dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This
出版日期Book 1990
關(guān)鍵詞SPICE; circuit; circuit design; integrated circuit; model; modeling; simulation; transistor
版次1
doihttps://doi.org/10.1007/978-3-7091-9043-2
isbn_softcover978-3-7091-9045-6
isbn_ebook978-3-7091-9043-2Series ISSN 0179-0307
issn_series 0179-0307
copyrightSpringer-Verlag/Wien 1990
The information of publication is updating

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發(fā)表于 2025-3-22 00:12:45 | 只看該作者
Book 1990urations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This
板凳
發(fā)表于 2025-3-22 03:22:20 | 只看該作者
0179-0307 o provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This978-3-7091-9045-6978-3-7091-9043-2Series ISSN 0179-0307
地板
發(fā)表于 2025-3-22 08:10:57 | 只看該作者
Models for the Depletion-Type MOSFET,hich is relatively weakly controlled by the gate electrode. When the channel implant is fairly strong, a hole inversion layer at the surface may occur, which prevents further depletion of the buried channel on a decrease in gate bias. Since this is an unwanted situation for practical application, we
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發(fā)表于 2025-3-22 10:01:52 | 只看該作者
Compact Transistor Modelling for Circuit Design978-3-7091-9043-2Series ISSN 0179-0307
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發(fā)表于 2025-3-22 16:56:06 | 只看該作者
Sozialer Wandel und Koh?sionsforschungions which together define a given model. This description will be limited to vertical . transistors for integrated circuits, including the substrate effects of the parasitic . transistor. Vertical . transistors also exist, but they require no new fundamental additions.
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發(fā)表于 2025-3-22 18:55:47 | 只看該作者
Computational Microelectronicshttp://image.papertrans.cn/c/image/230803.jpg
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發(fā)表于 2025-3-23 02:32:19 | 只看該作者
Das Selbst in der sozialen Kommunikation,The use of lateral . transistors is widespread in linear integrated circuits. They are applied as active load devices, current sources, level shifters etc. [5.1]. Furthermore they are an integral part of integrated injection logic (...) circuits [5.2].
10#
發(fā)表于 2025-3-23 07:26:38 | 只看該作者
Some Basic Semiconductor Physics,In this chapter we will deal shortly with a number of fundamental concepts of semiconductor physics (distribution functions, doping levels, carrier transport, mobility, etc.). One can also find here a set of formulas that are needed in the description of device phenomena and in the formulation of model equations.
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