Titlebook: Compact Modeling; Principles, Techniqu Gennady Gildenblat Book 2010 Springer Science+Business Media B.V. 2010 BJT.Compact models.Leistungsf

Accommodation

Surface-Potential-Based MOS Varactor Modelctor, and Freescale Semiconductor to facilitate RF CMOS design. We give details of the model, which is based on PSP, and show how it fits key device characteristics, including capacitance, gate current, and quality factor as functions of voltage, frequency, and geometry, for several technologies. Re

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Modeling of On-chip RF Passive Components distributed nature of the structure at high frequency. This is especially true for inductive components, namely inductors and transformers including baluns, because of the open capacitive and (long-range) magnetic couplings between the top widing metal layers and the lossy silicon substrate..This c

強化

Multi-Gate MOSFET Compact Model BSIM-MGsimulation in such advanced technologies, we have developed BSIM-MG: a versatile compact model for multi-gate MOSFETs. In this chapter separate formulations for common multi-gate and independent multi-gate MOSFETs are presented. The core .-. and .-. models are derived and agree well with TCAD simula

熄滅

燒瓶

Book 2010etically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

生命層

Ballad

https://doi.org/10.1007/978-3-322-81303-9ors (which are really JFETs). The model includes geometry and temperature dependence, and also has statistical variability, including mismatch, built in. Details of some useful parameter extraction procedures are provided.

miracle

Datenstruktur und methodische Probleme,(JUNCAP2 Express) are also discussed in this chapter. The JUNCAP2 model is incorporated in the PSP model for bulk MOSFET’s (see Chap.?1 of this book) and in the PSP-SOI model for SOI MOSFET’s (see Chap.?2 of this book).

Hemiparesis

https://doi.org/10.1007/978-3-322-88668-2its data very well across a wide range of biases, gate lengths and temperatures. It is also computationally efficient and suitable for simulating large circuits. Finally, several multi-gate circuit simulation examples are presented to demonstrate the use of the model.

無底

PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETsbody, and valence band tunneling current) and include a detailed description of parasitic effects. We discuss both the theoretical developments and verification of the model against test data and TCAD simulations with particular emphasis on the interplay between the model structure and its simulation capabilities.