Titlebook: Chemical Vapor Deposition; Thermal and Plasma D Srinivasan Sivaram Book 1995 Springer Science+Business Media New York 1995 chemistry.deposi

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書(shū)目名稱Chemical Vapor Deposition影響因子(影響力)




書(shū)目名稱Chemical Vapor Deposition影響因子(影響力)學(xué)科排名




書(shū)目名稱Chemical Vapor Deposition網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱Chemical Vapor Deposition網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱Chemical Vapor Deposition被引頻次




書(shū)目名稱Chemical Vapor Deposition被引頻次學(xué)科排名




書(shū)目名稱Chemical Vapor Deposition年度引用




書(shū)目名稱Chemical Vapor Deposition年度引用學(xué)科排名




書(shū)目名稱Chemical Vapor Deposition讀者反饋




書(shū)目名稱Chemical Vapor Deposition讀者反饋學(xué)科排名

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FUSE

Manufacturability,process. It provides a framework to increase the efficiency with which processes can be made manufacturable. I believe this framework should be a prerequisite for all process/equipment engineers who hope to work in the microelectronic industry.

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Chemical Equilibrium and Kinetics,. This reaction is usually endothermic and the energy needed for the forward progress of this reaction can come from many sources: thermal, electrical plasmas, photons, etc. The earliest and most common means of supplying energy to the CVD reaction is by heating the substrate and this technique is c

殘暴

Reactor Design for Thermal CVD,products. We will treat this subject with a narrower focus: thin films with desired properties from gaseous sources. Such a discussion may be insufficient for the design of a commercial reactor from first principles. However, for the modification of an existing reactor for the purpose of tailoring f

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慢跑

CVD of Conductors,As device dimensions and film thicknesses scale down, thin film properties of conductors (see Chapter 2) begin to dominate and special processing conditions become necessary. For instance, it becomes essential to lower the processing temperature so as to minimize undesirable thermally activated proc

Painstaking

CVD of Dielectrics,s are more varied when compared to the applications of conductors. Silicon-based integrated circuit technology owes its popularity in no small measure to the existence of a stable native dielectric, SiO.. SiO. is used as the gate oxide in MOS devices, where it dictates their performance. Dielectrics

Postulate

CVD of Semiconductors,n theory, the growth of single-crystal thin films to match the substrate lattice, or epitaxy, is possible through most common methods of thin film deposition, such as evaporation, PVD, and CVD. However, CVD, liquid phase epitaxy and molecular beam epitaxy are the most commonly used methods of epitax