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Titlebook: Charge-Trapping Non-Volatile Memories; Volume 1 – Basic and Panagiotis Dimitrakis Book 2015 Springer International Publishing Switzerland 2

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書目名稱Charge-Trapping Non-Volatile Memories
副標題Volume 1 – Basic and
編輯Panagiotis Dimitrakis
視頻videohttp://file.papertrans.cn/225/224073/224073.mp4
概述Provides a comprehensive overview of the technology for charge-trapping non-volatile memories.Details new architectures and current modeling concepts for non-volatile memory devices.Focuses on conduct
圖書封面Titlebook: Charge-Trapping Non-Volatile Memories; Volume 1 – Basic and Panagiotis Dimitrakis Book 2015 Springer International Publishing Switzerland 2
描述.This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced..
出版日期Book 2015
關(guān)鍵詞3D Non-volatile Memories; Charge-trapping Layer; Charge-trapping Memories; Flash Memories; MAHOS; MANOS; M
版次1
doihttps://doi.org/10.1007/978-3-319-15290-5
isbn_softcover978-3-319-35047-9
isbn_ebook978-3-319-15290-5
copyrightSpringer International Publishing Switzerland 2015
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Introduction to NVM Devices,non and magnetic materials were some of the first materials having the hysteresis or the alternation between two different states depending on the magnetization direction, i.e., magnetic field up or down that is necessary for Boolean-logic devices.
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Book 2015of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced..
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concepts for non-volatile memory devices.Focuses on conduct.This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved a
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