找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Charge-Trapping Non-Volatile Memories; Volume 2--Emerging M Panagiotis Dimitrakis Book 2017 Springer International Publishing AG 2017 3D No

[復(fù)制鏈接]
查看: 20505|回復(fù): 35
樓主
發(fā)表于 2025-3-21 19:55:13 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Charge-Trapping Non-Volatile Memories
副標(biāo)題Volume 2--Emerging M
編輯Panagiotis Dimitrakis
視頻videohttp://file.papertrans.cn/225/224072/224072.mp4
概述Provides a comprehensive overview of the technology for charge-trapping non-volatile memories.Details new architectures and current modeling concepts for non-volatile memory devices.Focuses on conduct
圖書封面Titlebook: Charge-Trapping Non-Volatile Memories; Volume 2--Emerging M Panagiotis Dimitrakis Book 2017 Springer International Publishing AG 2017 3D No
描述.This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced..Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;.Details new architectures and current modeling concepts for non-volatile memory devices;.Focuses on conduction through multi-layer gate dielectrics stacks..
出版日期Book 2017
關(guān)鍵詞3D Non-volatile Memories; Charge-trapping Layer; Charge-trapping Memories; Flash Memories; MAHOS; MANOS; M
版次1
doihttps://doi.org/10.1007/978-3-319-48705-2
isbn_softcover978-3-319-83999-8
isbn_ebook978-3-319-48705-2
copyrightSpringer International Publishing AG 2017
The information of publication is updating

書目名稱Charge-Trapping Non-Volatile Memories影響因子(影響力)




書目名稱Charge-Trapping Non-Volatile Memories影響因子(影響力)學(xué)科排名




書目名稱Charge-Trapping Non-Volatile Memories網(wǎng)絡(luò)公開度




書目名稱Charge-Trapping Non-Volatile Memories網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Charge-Trapping Non-Volatile Memories被引頻次




書目名稱Charge-Trapping Non-Volatile Memories被引頻次學(xué)科排名




書目名稱Charge-Trapping Non-Volatile Memories年度引用




書目名稱Charge-Trapping Non-Volatile Memories年度引用學(xué)科排名




書目名稱Charge-Trapping Non-Volatile Memories讀者反饋




書目名稱Charge-Trapping Non-Volatile Memories讀者反饋學(xué)科排名




單選投票, 共有 1 人參與投票
 

0票 0.00%

Perfect with Aesthetics

 

1票 100.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用戶組沒有投票權(quán)限
沙發(fā)
發(fā)表于 2025-3-21 23:01:21 | 只看該作者
板凳
發(fā)表于 2025-3-22 04:22:36 | 只看該作者
Hybrid Memories Based on Redox Molecules,stable, with well-defined energy levels, capable of combining chemically to form larger composites with desired properties, capable of self-assembling in dense nanostructures on surfaces and the energy required for their manipulation and during device operation is much less compared to solid-state s
地板
發(fā)表于 2025-3-22 05:07:35 | 只看該作者
Organic Floating Gate Memory Structures,igher storage capacities. The new applications and devices in the market such as high definition TVs, iPADs, iPODs, Kindles, MP3s and smart phones operate through the storage of large amounts of data. Most of these devices are portable for everyday use for communication or entertainment purposes.
5#
發(fā)表于 2025-3-22 10:44:47 | 只看該作者
6#
發(fā)表于 2025-3-22 15:42:05 | 只看該作者
7#
發(fā)表于 2025-3-22 20:38:19 | 只看該作者
Organic Floating Gate Memory Structures,igher storage capacities. The new applications and devices in the market such as high definition TVs, iPADs, iPODs, Kindles, MP3s and smart phones operate through the storage of large amounts of data. Most of these devices are portable for everyday use for communication or entertainment purposes.
8#
發(fā)表于 2025-3-23 00:00:22 | 只看該作者
Panagiotis DimitrakisProvides a comprehensive overview of the technology for charge-trapping non-volatile memories.Details new architectures and current modeling concepts for non-volatile memory devices.Focuses on conduct
9#
發(fā)表于 2025-3-23 05:14:40 | 只看該作者
10#
發(fā)表于 2025-3-23 09:33:02 | 只看該作者
https://doi.org/10.1007/978-3-319-48705-23D Non-volatile Memories; Charge-trapping Layer; Charge-trapping Memories; Flash Memories; MAHOS; MANOS; M
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-8 20:00
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
太谷县| 岗巴县| 阿勒泰市| 鄱阳县| 新巴尔虎右旗| 固始县| 临城县| 尤溪县| 凤凰县| 海南省| 大理市| 当雄县| 措勤县| 郓城县| 梅河口市| 正定县| 蒙自县| 吉水县| 威宁| 安陆市| 芮城县| 平果县| 休宁县| 新宾| 中方县| 姚安县| 壶关县| 新泰市| 延寿县| 金溪县| 江北区| 布拖县| 教育| 稷山县| 乌拉特后旗| 塔城市| 连山| 克拉玛依市| 闽侯县| 淄博市| 开化县|