| 書目名稱 | Charge Transport in Low Dimensional Semiconductor Structures | | 副標(biāo)題 | The Maximum Entropy | | 編輯 | Vito Dario Camiola,Giovanni Mascali,Vittorio Roman | | 視頻video | http://file.papertrans.cn/225/224065/224065.mp4 | | 概述 | Complete description of the systematic use of the maximum entropy principle in semiconductors.Models for charge transport in DG-MOSFETs that can be useful tools in computer-aided design in nanoelectro | | 叢書名稱 | Mathematics in Industry | | 圖書封面 |  | | 描述 | .This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schr?dinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, | | 出版日期 | Book 2020 | | 關(guān)鍵詞 | Maximum entropy principle; charge transport in confined structure; simulation of electron devices; char | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-030-35993-5 | | isbn_softcover | 978-3-030-35995-9 | | isbn_ebook | 978-3-030-35993-5Series ISSN 1612-3956 Series E-ISSN 2198-3283 | | issn_series | 1612-3956 | | copyright | Springer Nature Switzerland AG 2020 |
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