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Titlebook: Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot; Suranjana Sengupta Book 2011 Springe

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發(fā)表于 2025-3-21 18:48:47 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱(chēng)Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot
編輯Suranjana Sengupta
視頻videohttp://file.papertrans.cn/225/224020/224020.mp4
概述Nominated as an outstanding contribution by Rensselaer Polytechnic Institute.Presents current THz research in a single source in full depth.Includes brand new, original research and important breakthr
叢書(shū)名稱(chēng)Springer Theses
圖書(shū)封面Titlebook: Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot; Suranjana Sengupta Book 2011 Springe
描述.Terahertz science and technology is attracting great interest due to its application in a wide array of fields made possible by the development of new and improved terahertz radiation sources and detectors. This book focuses on the development and characterization of one such source - namely the semi-large aperture photoconducting (PC) antenna fabricated on Fe-doped bulk Ga.0.69.In.0.31.As substrate. The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga.0.69.In.0.31.As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga.0.69.In.0.31.As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a high-power terahertz radiation source for time-domain terahertz spectroscopy and imaging systems..
出版日期Book 2011
關(guān)鍵詞Terahertz emission; bulk crystal growth; gallium indium arsenide; hort pulse terahertz radiation source
版次1
doihttps://doi.org/10.1007/978-1-4419-8198-1
isbn_softcover978-1-4614-2827-5
isbn_ebook978-1-4419-8198-1Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightSpringer Science+Business Media, LLC 2011
The information of publication is updating

書(shū)目名稱(chēng)Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot影響因子(影響力)




書(shū)目名稱(chēng)Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot影響因子(影響力)學(xué)科排名




書(shū)目名稱(chēng)Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱(chēng)Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱(chēng)Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot被引頻次




書(shū)目名稱(chēng)Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot被引頻次學(xué)科排名




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Generation of Sub-Picosecond Terahertz Pulses, Fe ion implanted Ga.In.As had a reduced pulse width compared to that obtained from the unimplanted emitters. This reduction in pulse width was attributed to the rapid relaxation of the carriers from the conduction state to the trapped state connected with the Fe ions and vacancies. It was also poss
板凳
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Ultrafast Spectroscopy,ple by the pump pulse. This assumption is based on the fact that we conduct our experiments at high excitation densities that favor the quick thermalization of hot carriers via carrier-carrier scattering. The cooling of hot carriers occurs via various phonon scattering mechanism among which scatteri
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Conclusions and Future Outlook,s fabricated on Fe-doped bulk Ga.In.As substrate. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga.In.As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a pulsed THz radiation source with MHz repetiti
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發(fā)表于 2025-3-22 14:45:21 | 只看該作者
Experimental Techniques, by a Wollaston prism. At this point, the phase modulation of the probe beam is converted to an intensity modulation of the two orthogonal polarizations of the probe beam, which are then steered into a pair of balanced photodiodes. A lock-in amplifier subsequently detects the difference in probe laser light intensities measured by the photodiodes.
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發(fā)表于 2025-3-22 18:47:06 | 只看該作者
Praktisches Lehrbuch der Tuberkulose regime has been of considerable interest to the scientific community of late. The term terahertz is typically used to indicate the region of electromagnetic spectrum between the frequencies 100?GHz (100?×?10.?Hz) and 10?THz (10?×?10.?Hz) corresponding to the sub-millimeter wavelength range 3?mm to
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