Titlebook: CMOS-Compatible Key Engineering Devices for High-Speed Silicon-Based Optical Interconnections; Jing Wang Book 2019 Springer Nature Singapo

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BOLUS

CMOS-Compatible Silicon Electro-Optic Modulator, electro-optic modulator based on plasma dispersion effect is introduced. Then, the design theory of pure silicon electro-optic modulator is systematically put forward, and the method of optimizing the size of doping area in the modulator waveguide is introduced through the combination of semiconduc

物質(zhì)

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CMOS-Compatible Si-Based Polarization Splitter-Rotator,h as silicon-based electrically-pumped laser, electro-optic modulator, photo-detector, WDM device and MDM device. In addition to on-chip optical interconnections, other kinds of optical interconnections inevitably need to connect to the outside world.

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Organic Nanotechnology Enabled Sensors,and had not yet established a timetable. This is likely to mean that the opportunity to move to 10 nm at the end of 2016 is impossible. It can be seen that Moore’s law is getting more and more serious and is unable to continue to develop rapidly as Moore predicted.

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熱心

CMOS-Compatible Advanced Multiplexing Technology,ntum?[., .]. In this chapter, we study three multiplexing technology for silicon optical interconnections, which are wavelength-division multiplexing (WDM), polarization-division multiplexing (PDM) and mode-division multiplexing (MDM).

Analogy

Kourosh Kalantar-zadeh,Benjamin Frywith the lateral PN junction, and the extraction of various circuit elements, and optimized the traveling-wave electrode based on theory of microwave transmission line. Finally, processing and characterization of our pure silicon electro-optic modulator with two typical structures were reported.