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Titlebook: CMOS Data Converters for Communications; Mikael Gustavsson,J. Jacob Wikner,Nianxiong Nick T Book 2002 Springer Science+Business Media New

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41#
發(fā)表于 2025-3-28 15:11:16 | 只看該作者
Modeling of Nyquist D/A Converters,er circuit-level simulations. Mostly, static requirements have been addressed but in the same results can be modified to cover AC as well..Extending the modeling, we can also use measured result from a DAC, and extract information on the process and the parasitic resistance and capacitance in the circuit.
42#
發(fā)表于 2025-3-28 21:50:16 | 只看該作者
Implementation of CMOS Current-Steering D/A Converters,rter depends on errors in the layout by comparing two similar DACs and highlighted the importance of high frequency poles in the output impedance of the unit current sources. We have shown that it is possible to reach an SFDR of over 75 dBc in a standard 3.3 V digital CMOS process and an SFDR of 65 dBc with a single 1.5-V supply voltage.
43#
發(fā)表于 2025-3-29 01:20:58 | 只看該作者
44#
發(fā)表于 2025-3-29 05:45:51 | 只看該作者
45#
發(fā)表于 2025-3-29 08:32:32 | 只看該作者
https://doi.org/10.1007/978-3-8350-9516-8s at stake in rival modes of global image banking. Despite continuities in service delivery, a profound difference of aesthetic allegiance separates Bettmann and Corbis–Bettmann, centered on the role of historicity in the manufacture of image banks.
46#
發(fā)表于 2025-3-29 12:29:10 | 只看該作者
47#
發(fā)表于 2025-3-29 18:02:05 | 只看該作者
48#
發(fā)表于 2025-3-29 22:52:07 | 只看該作者
Howell G. M. Edwardso favor trapping of an electron, the detailed geometry of the trapping site can be changed by the presence of the electron. This is analogous to the solvation of an electron in which the surrounding molecular groups are reoriented by the presence of the electron compared to their orientation in the
49#
發(fā)表于 2025-3-30 01:09:39 | 只看該作者
50#
發(fā)表于 2025-3-30 06:14:02 | 只看該作者
978-3-531-16759-6VS Verlag für Sozialwissenschaften | Springer Fachmedien Wiesbaden GmbH, Wiesbaden 2011
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