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Titlebook: Bismuth-Containing Alloys and Nanostructures; Shumin Wang,Pengfei Lu Book 2019 Springer Nature Singapore Pte Ltd. 2019 Bismuth alloy.Dilut

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發(fā)表于 2025-3-21 19:49:02 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
期刊全稱Bismuth-Containing Alloys and Nanostructures
影響因子2023Shumin Wang,Pengfei Lu
視頻videohttp://file.papertrans.cn/189/188881/188881.mp4
發(fā)行地址Covers a wide range of novel Bi-containing alloys and nanostructures, including semiconductors, superconductors, topological insulators, thermoelectric and optic fibers.Combines theoretical modeling,
學(xué)科分類Springer Series in Materials Science
圖書封面Titlebook: Bismuth-Containing Alloys and Nanostructures;  Shumin Wang,Pengfei Lu Book 2019 Springer Nature Singapore Pte Ltd. 2019 Bismuth alloy.Dilut
影響因子.This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials.?It?provides a timely overview of bismuth alloys and nanostructures, from material synthesis and physical properties to device applications and also includes the latest research findings.?Bismuth is considered to be a sustainable and environmentally friendly element, and has received increasing attention in a variety of innovative research areas in recent years.?The book?is intended as a reference resource and textbook for graduate students and researchers working in these fields.?.
Pindex Book 2019
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發(fā)表于 2025-3-21 21:55:55 | 只看該作者
Bismuth-Related Nanostructures,Bismuth can modify surface reconstruction of III-V semiconductors and affect their growth conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We present an overview of how the above Bi-related effects influence structural and optical properties of III-V nanostructures.
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發(fā)表于 2025-3-22 02:32:11 | 只看該作者
地板
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發(fā)表于 2025-3-22 09:58:13 | 只看該作者
Lehrbuch der Hochfrequenztechnikd and discussed extensively. Empirical models, including tight-binding (TB) model, band anti-crossing (BAC), valance band anti-crossing (VBAC), and . model, have been widely applied in calculations of electronic properties of dilute bismide III-V materials. First-principle methods have also been use
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發(fā)表于 2025-3-22 16:43:28 | 只看該作者
Lehrbuch der Hochfrequenztechniking this material have been produced, such as quantum well lasers, LEDs, solar cells, etc. The Bi incorporated into AlAs is expected to change the bandgap from indirect to direct. There are only a few theoretical reports on AlAsBi, however, experimental research results are seldom reported. In this
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發(fā)表于 2025-3-22 18:17:05 | 只看該作者
,Elektronenr?hren und Halbleiter,egion. However, the alloys are highly metastable due to the large covalent radius of the Bi atom compared to the other group V atoms, which are replaced in the cubic zinc-blende lattice. Hence, carefully adjusted growth conditions at low growth temperatures are required in order to incorporate a sig
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發(fā)表于 2025-3-22 23:05:18 | 只看該作者
H. Brunswig,R. W. Lorenz,A. Vlcek,O. Zinkey (MBE) and their surface morphology, structural, and optical properties are investigated along with device applications. We describe how the Bi content in GaAs1?xBix epilayers grown on (100), (411)A, and (411)B GaAs substrates can be controlled by the growth conditions. Nonstandard growth condition
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發(fā)表于 2025-3-23 03:45:55 | 只看該作者
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