找回密碼
 To register

QQ登錄

只需一步,快速開(kāi)始

掃一掃,訪問(wèn)微社區(qū)

打印 上一主題 下一主題

Titlebook: Bias Temperature Instability for Devices and Circuits; Tibor Grasser Book 2014 Springer Science+Business Media New York 2014 Metastable De

[復(fù)制鏈接]
查看: 42199|回復(fù): 57
樓主
發(fā)表于 2025-3-21 19:00:59 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
期刊全稱Bias Temperature Instability for Devices and Circuits
影響因子2023Tibor Grasser
視頻videohttp://file.papertrans.cn/186/185415/185415.mp4
發(fā)行地址Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics.Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence.Explains t
圖書封面Titlebook: Bias Temperature Instability for Devices and Circuits;  Tibor Grasser Book 2014 Springer Science+Business Media New York 2014 Metastable De
影響因子This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Pindex Book 2014
The information of publication is updating

書目名稱Bias Temperature Instability for Devices and Circuits影響因子(影響力)




書目名稱Bias Temperature Instability for Devices and Circuits影響因子(影響力)學(xué)科排名




書目名稱Bias Temperature Instability for Devices and Circuits網(wǎng)絡(luò)公開(kāi)度




書目名稱Bias Temperature Instability for Devices and Circuits網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書目名稱Bias Temperature Instability for Devices and Circuits被引頻次




書目名稱Bias Temperature Instability for Devices and Circuits被引頻次學(xué)科排名




書目名稱Bias Temperature Instability for Devices and Circuits年度引用




書目名稱Bias Temperature Instability for Devices and Circuits年度引用學(xué)科排名




書目名稱Bias Temperature Instability for Devices and Circuits讀者反饋




書目名稱Bias Temperature Instability for Devices and Circuits讀者反饋學(xué)科排名




單選投票, 共有 0 人參與投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用戶組沒(méi)有投票權(quán)限
沙發(fā)
發(fā)表于 2025-3-21 21:07:51 | 只看該作者
板凳
發(fā)表于 2025-3-22 00:48:34 | 只看該作者
地板
發(fā)表于 2025-3-22 07:05:56 | 只看該作者
https://doi.org/10.1007/978-1-349-09706-7 present a microscopic formulation of the reaction–diffusion model based on the reaction–diffusion master equation and solve it using the stochastic simulation algorithm. The calculations are compared to the macroscopic version as well as established experimental data. The degradation predicted by t
5#
發(fā)表于 2025-3-22 09:29:44 | 只看該作者
6#
發(fā)表于 2025-3-22 14:11:42 | 只看該作者
S. Mirel,S. Pop,E. Onaca,S. Domnita,V. Mirelpendent defects. Although the kinetics of charge capture and defect creation clearly require the presence of charge carriers in the channel, they appear reaction rather than diffusion limited. While a number of peculiar features in these kinetics have been revealed recently, the most striking featur
7#
發(fā)表于 2025-3-22 18:50:15 | 只看該作者
Book 2014as temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
8#
發(fā)表于 2025-3-22 23:49:42 | 只看該作者
Tibor GrasserEnables readers to understand and model negative bias temperature instability, with an emphasis on dynamics.Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence.Explains t
9#
發(fā)表于 2025-3-23 04:30:07 | 只看該作者
10#
發(fā)表于 2025-3-23 06:32:42 | 只看該作者
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛(ài)論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評(píng) 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-14 00:45
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
太保市| 余姚市| 柳江县| 红河县| 潼南县| 东至县| 东兴市| 搜索| 雅江县| 黎城县| 额济纳旗| 齐河县| 长乐市| 武宁县| 顺昌县| 重庆市| 曲松县| 西宁市| 梅州市| 潜江市| 福建省| 汾阳市| 八宿县| 雅安市| 茂名市| 中牟县| 巴彦县| 平安县| 政和县| 灵台县| 万盛区| 湘潭市| 兴城市| 敦煌市| 霍州市| 惠东县| 乌苏市| 郑州市| 梅州市| 金昌市| 五常市|