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Titlebook: Beyond-CMOS Technologies for Next Generation Computer Design; Rasit O. Topaloglu,H.-S. Philip Wong Book 2019 Springer International Publis

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21#
發(fā)表于 2025-3-25 05:46:08 | 只看該作者
22#
發(fā)表于 2025-3-25 10:25:17 | 只看該作者
Die Bausteine des Internet der Dingee more compact and energy-efficient circuits. In this chapter we describe operating principles and dynamic behavior of SWD and STMG. We present circuit benchmarking and outlook for these two concepts and discuss the action points that will enable them.
23#
發(fā)表于 2025-3-25 11:52:24 | 只看該作者
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發(fā)表于 2025-3-25 17:21:08 | 只看該作者
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發(fā)表于 2025-3-25 23:39:36 | 只看該作者
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發(fā)表于 2025-3-26 00:24:21 | 只看該作者
Heterogeneous Integration of 2D Materials and Devices on a Si Platform,d optoelectronic properties and the easiness of their integration with silicon technologies have made 2D materials and devices a very promising and flexible platform for More-than-Moore applications. In this chapter, we discuss some of the opportunities of this heterogeneous integration in next-gene
27#
發(fā)表于 2025-3-26 05:59:50 | 只看該作者
28#
發(fā)表于 2025-3-26 11:56:21 | 只看該作者
The Processing-in-Memory Paradigm: Mechanisms to Enable Adoption,cation demand for main memory continues to grow, DRAM-based main memory is increasingly becoming a larger system bottleneck in terms of both performance and energy consumption. A major reason for poor memory performance and energy efficiency is memory’s inability to perform computation. Instead, dat
29#
發(fā)表于 2025-3-26 15:54:03 | 只看該作者
Emerging Steep-Slope Devices and Circuits: Opportunities and Challenges,ies is an appealing approach to further continue the power scaling-down. This chapter reviews some promising beyond-CMOS emerging transistor technologies, including Tunnel FETs, Ferroelectric FETs, and Hyper-FETs. Circuit design techniques based on these emerging devices are also reviewed to provide
30#
發(fā)表于 2025-3-26 17:03:38 | 只看該作者
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